Abstract:As of today, highly germanium doped Czochralski silicon crystals are used in applications. However, it is not clear how a germanium content in the range of 10(18) atoms/cm(3) influences the oxygen precipitation behavior, which is highly relevant for the gettering potential of the wafer. In this context, high energy X-ray diffraction is a promising tool to monitor real-time the strain introduced by the oxygen agglomeration and growth. Nevertheless, in particular, in the dynamical limit of X-ray diffraction and at elevated temperatures, the strain originating from the precipitation process has to be clearly distinguished from the intensity contribution of thermal vibrations. In Laue geometry, dynamical effects can even lead to an increment of the integrated intensity with temperature completely unexpected in the kinematical limit, where temperature is tackled solely by a Debye-Waller factor. In the following, an approach is presented allowing us to completely correct the influence of thermal vibrations in the dynamical limit. This approach is applied to undoped and highly germanium doped silicon crystals, clearly revealing an enhanced inventory of grown-in precipitates with germanium doping and suggesting a morphological transformation towards a phase of higher strain of the grown-in precipitates in the range between room temperature and 800 degrees C. Published by AIP Publishing.

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