Abstract:Electronic trap states are a critical yet unavoidable aspect of semiconductor devices, impacting performance of various electronic devices such as transistors, memory devices, solar cells, and LEDs. The density, energy level, and position of these trap states often enable or constrain device functionality, making their measurement crucial in materials science and device fabrication. Most methods for measuring trap states involve fabricating a junction, which can inadvertently introduce or alter traps, highlighting the need for alternative, less-invasive techniques. Here, we present a unique photo-Hall-based method to detect and characterize trap density and energy level while concurrently extracting key carrier properties, including mobility, photocarrier density, recombination lifetime, and diffusion length. This technique relies on analyzing the photo-Hall data in terms of "photo-Hall conductivity" vs. electrical conductivity under varying light intensities and temperatures. We show that the photo-Hall effect, in the presence of traps, follows an $\textit{astonishingly simple}$ relationship - $\textit{a hyperbola equation}$ - that reveals detailed insights into charge transport and trap occupation. We have successfully applied this technique to P and N-type silicon as a benchmark and to high-performance halide perovskite photovoltaic films. This technique substantially expands the capability of Hall effect-based measurements by integrating the effects of the four most common excitations in nature - electric field, magnetic field, photon, and phonon in solids - into a single equation and enabling unparalleled extraction of charge carrier and trap properties in semiconductors.

Effects of Grain Size on Various Electrical Trap Extraction Methods in Low-Temperature Polysilicon Thin Films

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance

Geometric Effect Elimination and Reliable Trap State Density Extraction in Charge Pumping of Polysilicon Thin-Film Transistors

Study of Traps in Low-Temperature Polysilicon Thin Film Transistors Using a Current Transient Method

Impact of Interface Trap Distribution on the Performance of LTPS TFT

Comparative Study on the Separate Extraction of Interface and Bulk Trap Densities in Indium Gallium Zinc Oxide Thin-Film Transistors Using Capacitance–Voltage and Current–Voltage Characteristics

Trapping in organic field-effect transistors

The trap DOS in small molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation

Extraction of Average Interface Trap Density using Capacitance-Voltage Characteristic at SiGe p-FinFET and Verification using Terman's Method

Optimization of charge pumping technique in polysilicon TFTs for geometric effect elimination and trap state density extraction

Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

Electronic Trap Detection with Carrier-Resolved Photo-Hall Effect

Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/ β -Ga2O3 metal-oxide-semiconductor capacitors

Channel Length-Dependent Parasitic Bipolar Transistor Effect in Poly-Si TFTs Considering Traps at Grain Boundary

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

An Accurate Method To Extract And Separate Interface And Gate Oxide Traps By The Mosfet Subthreshold Current

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current