Mechanistic Understanding of the Interfacial Properties of Metal-PtSe2 Contacts
Liujian Qi,Mengqi Che,Mingxiu Liu,Bin Wang,Nan Zhang,Yuting Zou,Xiaojuan Sun,Zhiming Shi,Dabing Li,Shaojuan Li
DOI: https://doi.org/10.1039/d3nr02466k
IF: 6.7
2023-07-21
Nanoscale
Abstract:With the advantage of moderate band gap, high carrier mobility and good environmental stability, two-dimensional (2D) semiconductor shows promising applications in next-generation electronics. However, the accustomed metal-2D semiconductor contact may lead to strong Fermi level pinning (FLP) effect, which severely limits the practical performance of 2D electronics. Herein, the interfacial properties of the contacts between a promising 2D semiconductor, PtSe2, and a sequence of metal electrodes are systematically investigated. The strong interfacial interactions formed in all metal-PtSe2 contacts lead to chemical bonds and significant interfacial dipole, resulting in vertical Schottky barrier for Ag, Au, Pd and Pt based systems, however, lateral Schottky barrier for Al, Cu, Sc and Ti based systems, with strong FLP effect. Remarkably, the tunneling probability for most metal-PtSe2 are significantly high and the tunneling-specific resistivity is two orders of magnitude lower than the state-of-the-art contacts, demonstrating the high efficiency for the electron injection from metal to PtSe2. Moreover, the introduction of h-BN as buffer layer leads to the weakened FLP effect (S = 0.50) and the transformation into p-type Schottky contact for Pt-PtSe2 contact. These results reveal the underlying mechanism of the interfacial properties of metal-PtSe2 contacts, which is useful for designing advanced 2D semiconductor-based electronics.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry