Polarization dependent interface properties of ferroelectric Schottky barriers studied by soft X-ray absorption spectroscopy

H. Kohlstedt,A. Petraru,M. Meier J. Denlinger,J. Guo,Y. Wanli,A. Scholl,B. Freelon,T. Schneller,R. Waser,P. Yu,R. Ramesh,T. Learmonth,P.-A. Glans,K. E. Smith
DOI: https://doi.org/10.48550/arXiv.0810.4272
2008-10-23
Abstract:We applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ray absorption spectra were polarization state dependent. The results are explained on the basis of photo electric effects and the inner potential in the ferroelectric capacitors as a result of back-to-back Schottky barriers superimposed by the potential due to the depolarization field. In general, the presented method offers the opportunity to investigate the electronic structure of buried metal-insulator and metal-semiconductor interfaces in thin film devices. Corresponding author: <a class="link-external link-http" href="http://h.h.kohlstedt" rel="external noopener nofollow">this http URL</a>@fz<a class="link-external link-http" href="http://-juelich.de" rel="external noopener nofollow">this http URL</a>
Materials Science
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