Device Model for Graphene Nanoribbon Phototransistor

Victor Ryzhii,Vladimir Mitin,Maxim Ryzhii,Nadezhda Ryabova,Taiichi Otsuji

DOI: https://doi.org/10.1143/APEX.1.063002

2008-04-11

Abstract:An analytical device model for a graphene nanoribbon phototransistor (GNR-PT) is presented. GNR-PT is based on an array of graphene nanoribbons with the side source and drain contacts, which is sandwiched between the highly conducting substrate and the top gate. Using the developed model, we derive the explicit analytical relationships for the source-drain current as a function of the intensity and frequency of the incident radiation and find the detector responsivity. It is shown that GNR-PTs can be rather effective photodetectors in infrared and terahertz ranges of spectrum.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop a graphene nanoribbon - based phototransistor (GNR - PT) and evaluate its performance as a far - infrared (FIR) and terahertz (THz) photodetector. Specifically, the paper aims to:

1. **Propose an analytical model**: Establish an analytical device model for GNR - PT to describe its working principle and performance.
2. **Derive the relationship between current and radiation**: Through this model, derive the explicit analytical relationship between the source - drain current and the intensity and frequency of the incident radiation.
3. **Calculate the detector responsivity**: Use the above relationship to calculate the responsivity of the detector and explore its performance under different conditions.
4. **Demonstrate potential advantages**: Prove that GNR - PT can be an efficient infrared and terahertz photodetector, especially when the performance of traditional detectors in these bands is limited.

### Background problems

Traditionally, photodetectors in the FIR and THz ranges usually use narrow - gap semiconductors or quantum well structures. However, these materials and technologies have some limitations, such as lower quantum efficiency and photoelectric gain. To overcome these problems, researchers have explored the application of low - dimensional structures such as quantum wires and quantum dots, but the preparation and integration of these structures are relatively complex.

### Advantages of graphene

As a two - dimensional material, graphene has unique electronic properties. Especially in the form of nanoribbons, the energy band structure can be adjusted by adjusting the width of the nanoribbons. This makes graphene nanoribbons a potentially new material for FIR and THz photodetectors.

### Main contributions of the paper

1. **Model establishment**: Proposed a GNR - PT structure including side - source and drain contacts, and sandwiched it between a highly conductive substrate and a top gate.
2. **Theoretical analysis**: Through theoretical analysis, obtained the relationship between the source - drain current and radiation intensity and frequency, as well as the formula for the detector responsivity.
3. **Performance evaluation**: Demonstrated the efficient detection ability of GNR - PT in the infrared and terahertz bands, especially significantly superior to traditional quantum well, quantum wire and quantum dot detectors in terms of quantum efficiency and photoelectric gain.

### Key formulas

1. **Energy band structure**:
\[
\varepsilon_{\pm n}(p) = \pm v \sqrt{p^2+\left(\frac{\pi \hbar}{d}\right)^2 n^2}
\]
where \( v\approx 10^8 \, \text{cm/s} \), \( p \) is the momentum along the nanoribbon, \( \hbar \) is the reduced Planck constant, \( d \) is the nanoribbon width, and \( n = 1, 2, 3,\ldots \) is the sub - band index.

2. **Source - drain current**:
\[
J = e\Sigma_b v_T \exp\left(-\frac{\Delta_B}{k_B T}\right)\left[1-\exp\left(-\frac{e V_d}{k_B T}\right)\right]
\]
where \( \Sigma_b=\frac{\epsilon V_b}{4\pi e W_b} \), \( v_T = v\sqrt{\frac{4 k_B T}{\pi \Delta}} \), \( \Delta_B=-e\phi_m \), \( \phi_m < 0 \) is the minimum value of the central region potential.

3. **Dark current**:
\[
J_{\text{dark}}=v\left(\frac{\epsilon V_b}{2\pi^{3/2} W_b}\right)\sqrt{\frac{k_B T}{\Delta}}\exp\left(-\frac{\Delta_{\text{dark}}^B}{k_B T}\right)\left[1 - \exp\left(-\frac{e V_d}{k_B T}\right)\right]