Large-Area, Transparent, And Flexible Infrared Photodetector Fabricated Using P-N Junctions Formed By N-Doping Chemical Vapor Deposition Grown Graphene

Nan Liu,He Tian,Gregor Schwartz,Jeffrey B. -H. Tok,Tian-Ling Ren,Zhenan Bao
DOI: https://doi.org/10.1021/nl500443j
IF: 10.8
2014-01-01
Nano Letters
Abstract:Graphene is a highly promising material for high speed, broadband, and multicolor photodetection. Because of its lack of bandgap, individually gated P- and N-regions are needed to fabricate photodetectors. Here we report a technique for making a large-area photodetector on the basis of controllable fabrication of graphene P-N junctions. Our selectively doped chemical vapor deposition (CVD) graphene photodetector showed a similar to 5% modulation of conductance under global IR irradiation. By comparing devices of various geometries, we identify that both the homogeneous and the P-N junction regions contribute competitively to the photoresponse. Furthermore, we demonstrate that our two-terminal graphene photodetector can be fabricated on both transparent and flexible substrates without the need for complex fabrication processes used in electrically gated three-terminal devices. This represents the first demonstration of a fully transparent and flexible graphene-based IR photodetector that exhibits both good photoresponsivity and high bending capability. This simple approach should facilitate the development of next generation high-performance IR photodetectors.
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