Investigation of photovoltaic properties of poly(3-hexylthiophene): Polynaphthalene-bithiophene heterostructure devices

Md. Nasir Uddin,Sumit Karmakar,Sadia Khanam,Nazia Chawdhury
DOI: https://doi.org/10.1016/j.optmat.2024.116385
IF: 3.754
2024-11-07
Optical Materials
Abstract:This work is focused on photoluminescence (PL) study of a P-type donor and two N-type acceptor semiconducting materials for an efficient organic photovoltaic (OPV) device fabrication. PL quenching of P-type poly(3-hexylthiophene) (P3HT) is investigated in solution containing N-type fullerene phenyl-C 61 -butyric acid methyl ester (PCBM) and N-type polynaphthalene-bithiophene (N2200) independently using chloroform solvent. Here, we studied the charge transfer behavior using PL spectroscopy and the experimental results of this investigation confirmed that PL quenching of P3HT by N2200 is more efficient than by PCBM. According to our findings, P3HT:N2200 is a more promising candidate than P3HT:PCBM blend solution for efficient photovoltaic devices. This work also incorporated the fabrication processes and the characterizations of the OPV device using the P3HT:N2200 blend as an active layer. The structure of the fabricated device is ITO/PEDOT:PSS/P3HT:N2200(1:1)/BCP/Al, with three different concentrations 10 mg/ml, 12 mg/ml, and 20 mg/ml of P3HT:N2200 active material with/without the addition of diiodooctane (DIO), with/without methanol treatment, and with/without annealing on the top of the active layer. The device with 12 mg/ml P3HT:N2200, with DIO and methanol treatment showed the best performance with 0.36% power conversion efficiency ( PCE ) and 45.0 % fill factor with 1.76 mA/cm 2 maximum short circuit current density ( J SC ).
materials science, multidisciplinary,optics
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