Photovoltaic Response in Poly(3-Octylthiophene) Based Metal-Semiconductor-Metal Diodes.

E Kymakis,GAJ Amaratunga,I Alexandrou,M Chhowalla,WI Milne
DOI: https://doi.org/10.1117/12.416939
2000-01-01
Abstract:We report here on properties of Metal-Semiconductor-Metal cells based on poly(3-octylthiophene), P3OT. The diodes were fabricated by spin-coating of poly (3-octylthiophene) on an indium-tin oxide (ITO) coated glass substrate and an aluminum top contact was evaporated onto the film. The optical and electrical characteristics of the diodes were studied. A power efficiency of 10(-4) was obtained at AM 1.5 conditions, while the power efficiency reached its maximum of 6 % under illumination at 256 nm at an intensity of 2 muW/cm(2).
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