Abstract:Vector piezo‐force microscopy (PFM) map illustrating the out‐of‐plane polarization component (background) and the in‐plane polarization direction (white arrows), with a zoomed‐in section (orange dashed box) highlighting flux closure domain characteristics. Topological polar soliton such as skyrmions, merons, vortices, flux closures represent topologically nontrivial structures with their stability governed by specific boundary conditions. These polar solitons can be utilized in enhancing memory density and reducing energy consumption in nanoelectronic devices. Flux closure domains exhibit high density and thermal stability, with a strain gradient as large as ≈106 m−1 at the core, which is tunable by adjusting the materials thickness, periodicity. The practical utilization of topological structures like flux closure in advanced applications requires the ability to manipulate them using external stimuli and ensuring their stability under thermal excitation. In this study, piezo‐force microscopy is employed to investigate the manipulation of flux closure nano‐domains through external electric field and temperature to observe their evolution. The findings demonstrate that the application of electric field can create or annihilate these nano‐domains and modify their density. Temperature variations significantly affect the density of flux closure domains, domain walls, correlating with enhanced capacitance of the system. This is crucial for improving the memory density of storage devices. Thus, by adjusting the density of these domains, it is possible to tailor the functional properties of nanoelectronic devices, such as capacitance and electromechanical response, enabling advanced application.

Comment on ``Elastic Stabilization of a Single-Domain Ferroelectric State in Nanoscale Capacitors and Tunnel Junctions" [N.A. Pertsev and H. Kohlstedt, Phys. Rev. Lett. 98, 257603 (2007).]

Elastic stabilization of a single-domain ferroelectric state in nanoscale capacitors and tunnel junctions

Depolarizing-Field Effect in Strained Nanoscale Ferroelectric Capacitors and Tunnel Junctions

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

On the persistence of polar domains in ultrathin ferroelectric capacitors

Domain Control in Ferroelectric Nanodots Through Surface Charges

Nanodomain Engineering in Ferroelectric Capacitors with Graphene Electrodes.

Critical Properties of Nanoscale Asymmetric Ferroelectric Tunnel Junctions or Capacitors

Comment on "Influence of image forces on the electron transport in ferroelectric tunnel junctions"

Harnessing ferroelectric domains for negative capacitance

Large Electrostrain Induced by Reversible Domain Switching in Ordered Ferroelectric Nanostructures with Optimized Geometric Configurations

Emergent Ferroelectric Switching Behavior from Polar Vortex Lattice

Critical Properties of Symmetric Nanoscale Metal–ferroelectric–metal Capacitors

Duality of Switching Mechanisms and Transient Negative Capacitance in Improper Ferroelectrics

Dual mechanisms for transient capacitance anomaly in improper ferroelectrics

Spontaneous Polarization in an Ultrathin Improper-Ferroelectric/Dielectric Bilayer in a Capacitor Structure at Cryogenic Temperatures

Vanishing Critical Thickness in Asymmetric Ferroelectric Tunnel Junctions: First Principle Simulations

On the negative capacitance in ferroelectric heterostructures

Highly efficient ferroelectric capacitor reservoir computing through the study of its nonlinear polarization dynamics

Why Do Ferroelectrics Exhibit Negative Capacitance?

Dynamics of Ferroelectric Flux Closure Array in Oxide Superlattices