Comment on "Influence of image forces on the electron transport in ferroelectric tunnel junctions"

N.M. Chtchelkatchev,A.V. Mikheyenkov

DOI: https://doi.org/10.48550/arXiv.1805.03258

2018-09-11

Abstract:Udalov and Beloborodov in the recent papers [Phys. Rev. B 95, 134106 (2017); Phys. Rev. B 96, 125425 (2017)] report the strong influence of image forces on the conductance of ferroelectric tunnel junctions. In particular, the authors state that there is enhancement of the electroresistance effect due to polarization hysteresis in symmetric tunnel junctions at nonzero bias. This conjecture seems to be a breakthrough --- the common knowledge is that the considerable effect, linear over voltage bias, takes place only in NONsymmetric junctions. We show that the influence of image forces on the conductance of ferroelectric tunnel junctions is highly overestimated due to neglecting the difference between characteristic ferroelectric relaxation and electron tunneling times. We argue that notable enhancement of the electroresistance effect from image forces due to polarization hysteresis in symmetric tunnel junctions at nonzero bias might be observed only at anomalously slow electron tunneling through the barrier. The same applies to magnetic tunnel junctions with a ferroelectric barrier also considered by Udalov et al: there is no significant increase of the magnetoelectric effect due to image forces for typical electron tunneling times. Udalov and Beloborodov completely missed the development of image force theory since 1950's and they forgot that electrons move much faster than atoms in condensed matter. We underline that taking into account dynamical effects in charge tunneling can bring new insight on physics of ferroelectric tunnel junctions.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is whether the influence of image forces on electron transport in ferroelectric tunnel junctions (FTJs) has been overestimated. Specifically, Udalov and Beloborodov proposed in their previous research that in symmetric ferroelectric tunnel junctions, due to the polarization hysteresis effect, image forces can significantly enhance the electroresistance effect. However, this review article points out that these conclusions may have overlooked the difference between the relaxation time of ferroelectric materials and the electron tunneling time.

### Main problems
1. **Influence of image forces**:
- Udalov and Beloborodov believe that image forces can significantly affect the conductance of symmetric ferroelectric tunnel junctions, and this effect can be enhanced by the polarization hysteresis effect.
- The author of this paper points out that this effect has been overestimated because the difference between the relaxation time of ferroelectric materials and the electron tunneling time has not been considered.

2. **Relationship between polarization relaxation time and electron tunneling time**:
- The polarization relaxation time of ferroelectric materials is much longer than the electron tunneling time. Therefore, in a single tunneling event, it is difficult for electrons to displace atoms in the insulating layer.
- This means that the influence of image forces on conductance may be very limited in actual situations, unless the electron tunneling speed is abnormally slow.

3. **Similar problems in magnetic tunnel junctions**:
- Similarly, in magnetic tunnel junctions with ferroelectric barriers, the influence of image forces on the magnetoelectric effect has also been overestimated. For typical electron tunneling times, image forces will not significantly increase the magnetoelectric effect.

### Formula summary
- Image force formula:
\[
F=\frac{e^{2}}{\epsilon(2x)^{2}}
\]
where \(x\) is the distance from the electron to the metal surface, and \(\epsilon\) is the dielectric constant.

- Image force potential energy:
\[
V_{0}=\int_{x}^{\infty}F(x)dx = -\frac{e^{2}}{4\epsilon x}
\]

- Potential energy approximation when considering multiple image charges:
\[
V\approx - 0.795\frac{e^{2}d}{4\epsilon x(d - x)}
\]
where \(d\) is the distance between metal contacts.

### Conclusion
This paper points out the deficiencies in previous research by re - evaluating the role of image forces in ferroelectric tunnel junctions. In particular, it emphasizes the importance of considering different time scales, that is, the difference between the relaxation time of ferroelectric materials and the electron tunneling time. This indicates that the actual influence of image forces on conductance and magnetoelectric effects may be much smaller than previously estimated.