Abstract:Significant scientific and technological progress in the field of spintronics is based on trilayer magnetic tunnel junction devices which principally rely on the physics of single barrier tunneling. While technologically relevant devices have been prototyped, the physics of single barrier tunneling poses ultimate limitations on the performance of magnetic tunnel junction devices. Here, we propose a fresh route toward high performance magnetic tunnel junctions by making electronic analogs of optical phenomena such as anti-reflections and Fabry-Pèrot resonances. The devices we propose feature anti-reflection enabled superlattice heterostructures sandwiched between the fixed and the free ferromagnets of the magnetic tunnel junction structure. Our predictions are based on the non-equilibrium Green's function spin transport formalism coupled self-consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation. Owing to the physics of bandpass spin filtering in the bandpass superlattice magnetic tunnel junction device, we demonstrate an ultra-high boost in the tunnel magneto-resistance (TMR$\approx5\times10^4\%$) and nearly 92% suppression of spin transfer torque switching bias in comparison to a traditional trilayer magnetic tunnel junction device. We rationalize improvised spin transfer torque switching via analysis of the Slonczewski spin current transmission spectra. The proof of concepts presented here can lead to next-generation spintronics device design harvesting the rich physics of superlattice heterostructures and exploiting spintronic analogs of optical phenomena.

Dynamic Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions

Theoretical Consideration of Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions

Temperature and Angular Dependences of Dynamic Spin-Polarized Resonant Tunneling in CoFeB∕MgO∕NiFe Junctions

Tunnel-barrier-enhanced dc voltage signals induced by magnetization dynamics in magnetic tunnel junctions

Dynamic Magnetoelectric Effect in Ferromagnet-Superconductor Tunnel Junctions

Oscillating Tunneling Magnetoresistance In Magnetic Double-Tunnel-Junction Structures

Tunneling Spectroscopy Using Spin Voltage

Spin-Polarized Tunneling and Magnetoresistance in Ferromagnet/Insulator(Semiconductor) Single and Double Tunnel Junctions Subjected to an Electric Field

Spin-polarized resonant tunneling and quantum-size effect in ferromagnetic tunnel junctions with double barriers subjected to an electric field

Current-driven magnetization dynamics and its correlation with magnetization configurations in perpendicularly magnetized tunnel junctions

Manipulating the Spin States in a Double Molecular Magnets Tunneling Junction

Oscillations of tunnel magnetoresistance induced by spin-wave excitations in ferromagnet-ferromagnet-ferromagnet double-barrier tunnel junctions

Spin-polarized Inelastic Tunneling Through Insulating Barriers.

Band-pass superlattice magnetic tunnel junctions

Spin-Dependent Inelastic Transport Through Single-Molecule Junctions with Ferromagnetic Electrodes

Spin effects in single-electron tunneling in magnetic junctions

Tunneling Magnetoresistance in Junctions Composed of Ferromagnets and Time-Reversal Invariant Topological Superconductors

Dynamics Of Spin-Dependent Tunneling Through A Semiconductor Double-Barrier Structure

Enhanced Spin Injection Efficiency In Ferromagnet/Semiconductor Tunnel Junctions

Tunneling Magnetoresistance Modulation in a Magnetic Tunnel Junction with a Ferroelectric Barrier

Current-driven Spin Oscillations in Noncollinear Antiferromagnetic Tunnel Junctions