Abstract:Spintronics is an approach to electronics in which the spin of the electrons is exploited to control the electric resistance R of devices. One basic building block is the spin-valve, which is formed if two ferromagnetic electrodes are separated by a thin tunneling barrier. In such devices, R depends on the orientation of the magnetisation of the electrodes. It is usually larger in the antiparallel than in the parallel configuration. The relative difference of R, the so-called magneto-resistance (MR), is then positive. Common devices, such as the giant magneto-resistance sensor used in reading heads of hard disks, are based on this phenomenon. The MR may become anomalous (negative), if the transmission probability of electrons through the device is spin or energy dependent. This offers a route to the realisation of gate-tunable MR devices, because transmission probabilities can readily be tuned in many devices with an electrical gate signal. Such devices have, however, been elusive so far. We report here on a pronounced gate-field controlled MR in devices made from carbon nanotubes with ferromagnetic contacts. Both the amplitude and the sign of the MR are tunable with the gate voltage in a predictable manner. We emphasise that this spin-field effect is not restricted to carbon nanotubes but constitutes a generic effect which can in principle be exploited in all resonant tunneling devices.

Manipulating the Spin States in a Double Molecular Magnets Tunneling Junction

Manipulating the Spin of Single-Molecule Magnet by Thermal Spin-Transfer Torque

All-Electric-Controlled Spin Current Switching in Single-Molecule Magnet-Tunnel Junctions

Manipulation and Readout of Spin States of a Single-Molecule Magnet by a Spin-Polarized Current

Thermoelectric-Induced Spin Currents in Single-Molecule Magnet Tunnel Junctions

Tuning Spin Transport Across Two-Dimensional Organometallic Junctions

Electrical switching of spin-polarized current in multiferroic tunneling junctions

Bipolar Magnetic Molecules for Spin‐Polarized Electric Current in Molecular Junctions

Giant Nonvolatile Manipulation of Magnetoresistance in Magnetic Tunnel Junctions by Electric Fields Via Magnetoelectric Coupling

Electrically Controllable Spin Filtering and Switching in Multiferroic Tunneling Junctions

Electric Field Control of Spin Transport

Gate-tunable High Tunneling Magnetoresistance Induced by Hybrid Interface States in Ni-electrode Single-Molecule Junctions

Generation and manipulation of spin current via a hybrid four-terminal single-molecule junction

Tunable Giant Magnetoresistance in a Single-Molecule Junction.

Spin-Dependent Inelastic Transport Through Single-Molecule Junctions with Ferromagnetic Electrodes

Bias Pulse-Controlled Thermal Spin Injector Based a Single-Molecule Magnet Tunneling Junction

Electrically Tunable Tunneling Rectification Magnetoresistance in Magnetic Tunneling Junctions with Asymmetric Barriers.

Spin Seebeck Effect in a Metal-Single-molecule-magnet-metal Junction

Switching of a quantum dot spin valve by single molecule magnets

Magnetic Modulation of Terahertz Waves via Spin-Polarized Electron Tunneling Based on Magnetic Tunnel Junctions