J. Martinek,J.Barnas,G. Michalek,B.R. Bulka,A. Fert
Abstract:Spin dependent single electron tunneling in ferromagnetic double junctions is analysed theoretically in the limit of sequential tunneling. The influence of discrete energy spectrum of the central electrode (island)on the spin accumulation, spin fluctuations and tunnel magnetoresistance is analysed numerically in the case of a nonmagnetic island. It is shown that spin fluctuations are significant in magnetic as well as in nonmagnetic junctions.
What problem does this paper attempt to address?
The problems that this paper attempts to solve are: in magnetic junctions, how the spin effects in the single - electron tunneling process affect the physical properties of the system, especially spin accumulation, spin fluctuations and tunnel magnetoresistance (TMR). Specifically, the authors focus on:
1. **Influence of discrete energy - level structure**: The specific influence of the discrete energy - level structure of the central electrode (island) on spin accumulation, spin fluctuations and TMR. This includes considering the case of non - magnetic islands.
2. **Roles of spin accumulation and spin fluctuations**: The importance of spin accumulation and spin fluctuations in magnetic and non - magnetic junctions, especially their manifestations under different magnetization direction configurations (such as parallel and antiparallel configurations).
3. **Extension of theoretical models**: Extend previous theoretical models to consider spin accumulation and spin fluctuations, so as to describe these phenomena more accurately.
Through these studies, the authors hope to better understand the spin - related single - electron tunneling behavior in magnetic double - junction systems and its impact on system performance.
### Specific problem analysis
- **Spin accumulation**: When the spin relaxation time on the island is long, spin accumulation becomes significant. This accumulation will lead to the enhancement of TMR and may produce some new phenomena, such as negative differential resistance or inverse TMR.
- **Spin fluctuations**: Even in non - magnetic junctions, spin fluctuations still exist. These fluctuations will show fine structures in the voltage - dependent standard deviation, originating from the discrete electron structure on the island.
- **I - V characteristics**: By calculating the I - V curves under different magnetization configurations, the differences caused by spin accumulation can be observed. These differences further lead to the change of TMR.
### Mathematical formulas
To describe these phenomena, the following key formulas are used in the paper:
- Expression of current \(I\):
\[
I = e\sum_{\sigma}\sum_{i}\sum_{\{n\}}|T_{l,i\sigma}|^{2}P(\{n\})\left[\delta_{n_{i\sigma},1}[1 - f(E_{i\sigma}+E_{l}^{+N^{*}}-E_{F})]-\delta_{n_{i\sigma},0}f(E_{i\sigma}+E_{l}^{-N^{*}}-E_{F})\right]
\]
- Probability distribution \(P(N_{\uparrow},N_{\downarrow})\):
\[
P(N_{\uparrow},N_{\downarrow})=\sum_{\{n\}}P(\{n\})\delta_{N_{\uparrow},\sum_{p}n_{p\uparrow}}\delta_{N_{\downarrow},\sum_{p}n_{p\downarrow}}
\]
- Occupation probability \(F(E_{i\sigma}|N_{\uparrow},N_{\downarrow})\):
\[
F(E_{i\sigma}|N_{\uparrow},N_{\downarrow})=\frac{1}{P(N_{\uparrow},N_{\downarrow})}\sum_{\{n\}}P(\{n\})\delta_{n_{i\sigma},1}\delta_{N_{\uparrow},\sum_{p}n_{p\uparrow}}\delta_{N_{\downarrow},\sum_{p}n_{p\downarrow}}
\]
These formulas help the authors quantitatively analyze the role of spin effects in the single - electron tunneling process and reveal their impact on system performance.