Abstract:Ballistic transport occurs whenever electrons propagate without collisions deflecting their trajectory. It is normally observed in conductors with a negligible concentration of impurities, at low temperature, to avoid electron–phonon scattering. Here, we use suspended bilayer graphene devices to reveal a new regime, in which ballistic transport is not limited by scattering with phonons or impurities, but by electron–hole collisions. The phenomenon manifests itself in a negative four-terminal resistance that becomes visible when the density of holes (electrons) is suppressed by gate-shifting the Fermi level in the conduction (valence) band, above the thermal energy. For smaller densities, transport is diffusive, and the measured conductivity is reproduced quantitatively, with no fitting parameters, by including electron–hole scattering as the only process causing velocity relaxation. Experiments on a trilayer device show that the phenomenon is robust and that transport at charge neutrality is governed by the same physics. Our results provide a textbook illustration of a transport regime that had not been observed previously and clarify the nature of conduction through charge-neutral graphene under conditions in which carrier density inhomogeneity is immaterial. They also demonstrate that transport can be limited by a fully electronic mechanism, originating from the same microscopic processes that govern the physics of Dirac-like plasmas.

Suppression of conductance fluctuation in weakly disordered mesoscopic graphene samples near the charge neutral point

Enhanced Conductance Fluctuation by Quantum Confinement Effect in Graphene Nanoribbons

Electronic Transport in Disordered Bilayer and Trilayer Graphene

Conductance fluctuations in graphene devices with superconducting contacts in different charge density regimes

Voltage-induced suppression of weak localization in graphene

Transport Properties of Mesoscopic Graphene Rings

Suppression of single-molecule conductance fluctuations using extended anchor groups on graphene and carbon-nanotube electrodes

Non-Ohmic behavior of carrier transport in highly disordered graphene

Universal Quantized Spin-Hall Conductance Fluctuation in Graphene

Influence of magnetic and electric fields on universal conductance fluctuations in thin films of the Dirac semi-metal Cd3As2

Density of States and Its Local Fluctuations Determined by Capacitance of Strongly Disordered Graphene

Dephasing effect on transport of a graphene p-n junction in a quantum Hall regime.

Equilibration of quantum hall edge states and its conductance fluctuations in graphene p-n junctions

Electron–hole collision limited transport in charge-neutral bilayer graphene

Pseudomagnetic fields and ballistic transport in a suspended graphene sheet

Magnetoconductance Oscillations in High-Mobility Suspended Bilayer and Trilayer Graphene

Disorder-induced Enhancement of Transport Through Graphene P-N Junctions

Transport Measurements on Ultra-Clean Dual-Gated Suspended Bilayer Graphene

Metallic-to-insulating transition in disordered graphene monolayers

Room-Temperature Observations of the Weak Localization in Low-Mobility Graphene Films

Conductance fluctuations due to a single bistable scatterer in a weakly connected conductor.