M. M. Fogler,F. Guinea,M. I. Katsnelson
Abstract:We study a suspended graphene sheet subject to the electric field of a gate underneath. We compute the elastic deformation of the sheet and the corresponding effective gauge field, which modifies the electronic transport. In a clean system the two-terminal conductance of the sample is reduced below the ballistic limit and is almost totally suppressed at low carrier concentrations in samples under tension. Residual disorder restores a small finite conductivity.
What problem does this paper attempt to address?
The problems that this paper attempts to solve are: to study the elastic deformation of suspended graphene sheets under the action of the underlying gate electric field and its influence on the electron transport properties. Specifically, the authors explored the following key issues:
1. **Elastic Deformation and Effective Gauge Field**:
- The suspended graphene sheets will undergo elastic deformation under the action of the gate electric field, and this deformation will generate an equivalent effective gauge field, thereby changing the electron transport properties.
2. **Conductivity Changes**:
- In a clean system, the two - terminal conductance will be lower than the ballistic limit, and is almost completely suppressed at low carrier concentrations.
- By introducing residual disorder, a certain finite conductivity can be restored.
3. **Physical Mechanism**:
- The deformation will cause the Dirac points to shift, which will create a mismatch between the graphene leads and the suspended region. If this shift exceeds the diameter of the Fermi circle \(2k_F\), the electrons will be completely reflected.
4. **Explanation of Experimental Phenomena**:
- The recent experimental results are qualitatively consistent with the theoretical predictions, but at very low carrier concentrations, the conductivity tends to a finite value \(\sim e^2/h\), which is due to the disorder - assisted tunneling processes.
### Summary of Mathematical Formulas
- The expression for conductivity \(G(n)\) is:
\[
G \simeq \frac{4e^2}{hW} \left[ k_F - \left( \pi - \frac{1}{2} \right) |A_y| \right]
\]
where \(W\) is the sample width, \(k_F=\sqrt{\pi |n|}\) is the Fermi wave vector, and \(A_y\) is a quantity related to the deformation.
- The equation satisfied by the maximum deformation \(h_0\) is:
\[
\left( h_0^2 - \frac{3}{16} L \Delta L \right) h_0=\frac{3\pi}{64} \frac{e^2}{\epsilon} E (nL^2)^2
\]
- The expression for the effective vector potential \(A_y(x)\) is:
\[
A_y(x)=C_1 \xi \beta \frac{P L^2}{8 E h_0}
\]
where \(\beta = d \log (\gamma_0)/d \log (a)\approx 2\) is a dimensionless electron - phonon coupling parameter, \(\gamma_0\approx 3 \text{eV}\) is the nearest - neighbor hopping energy, \(a\approx 1.4 \text{\AA}\) is the distance between carbon atoms, and \(\xi = \pm 1\) is the valley index.
### Conclusion
This paper shows through theoretical analysis that the elastic deformation of suspended graphene sheets under the action of the gate electric field has a significant impact on electron transport, especially at low carrier concentrations, where the conductivity is almost completely suppressed. These findings are helpful for understanding the unique electrical properties of suspended graphene and provide a theoretical basis for further research on its applications.