Abstract:Strain fields in graphene giving rise to pseudomagnetic fields have received much attention due to the possibility of mimicking real magnetic fields with magnitudes of greater than 100 Tesla. We examine systems with such strains confined to finite regions ("pseudomagnetic dots") and provide a transparent explanation for the characteristic sublattice polarization occurring in the presence of pseudomagnetic field. In particular, we focus on a triaxial strain leading to a constant field in the central region of the dot. This field causes the formation of pseudo Landau levels, where the zeroth order level shows significant differences compared to the corresponding level in a real magnetic field. Analytic arguments based on the Dirac model are employed to predict the sublattice and valley dependencies of the density of states in these systems. Numerical tight binding calculations of single pseudomagnetic dots in extended graphene sheets confirm these predictions, and are also used to study the effect of the rotating the strain direction and varying the size of the pseudomagnetic dot.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the influence of pseudomagnetic fields (PMFs) caused by strain fields in graphene on the electronic structure and local density of states (LDOS). Specifically, the author focuses on the system with pseudomagnetic fields in a finite area (i.e., "pseudomagnetic quantum dots") and explains the special sub - lattice polarization phenomenon that occurs in this case. ### Main problems and research objectives 1. **Relationship between pseudomagnetic fields and strain fields**: - Research how to generate pseudomagnetic fields in graphene through specific strain fields (such as triaxial strain), and explore the characteristics of these pseudomagnetic fields. - The author pays special attention to the triaxial strain configuration that generates a constant pseudomagnetic field in the central area. 2. **Formation of pseudo - Landau levels**: - Explore the formation mechanism of pseudo - Landau levels (pLLs) caused by pseudomagnetic fields. - Analyze the unique properties of the zero - order pseudo - Landau level (n = 0 pLL), especially its sub - lattice polarization phenomenon. 3. **Sub - lattice polarization phenomenon**: - Explain the sub - lattice polarization phenomenon and its physical mechanism in the graphene system under the action of pseudomagnetic fields. - Verify the existence of this polarization phenomenon through theoretical analysis and numerical simulation, and discuss its dependence on the relative orientation of the strain direction and the lattice direction. 4. **Finite - size effect and influence of strain direction**: - Research the influence of the size of pseudomagnetic quantum dots on their electronic structure, especially the disappearance phenomenon of pseudo - Landau levels when the quantum dot size is close to or smaller than the magnetic length. - Explore the influence of different strain directions (such as along the armchair direction and the zigzag direction) on pseudomagnetic fields and pseudo - Landau levels. ### Research methods - **Theoretical analysis**: Based on the low - energy Dirac model, derive the relationship between strain fields and pseudomagnetic fields, and predict the sub - lattice polarization phenomenon. - **Numerical simulation**: Use the tight - binding model for numerical calculation, verify theoretical predictions, and study the finite - size effect and the influence of strain direction. ### Conclusions By combining theoretical analysis and numerical simulation, the author reveals the unique electronic structure characteristics caused by pseudomagnetic fields in graphene, especially the sub - lattice polarization phenomenon and the formation mechanism of pseudo - Landau levels. These findings are helpful for in - depth understanding of the potential applications of strain engineering in regulating the electronic properties of graphene.

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