Non-Ohmic behavior of carrier transport in highly disordered graphene
Shun-Tsung Lo,Chiashain Chuang,R. K. Puddy,T. -M. Chen,C. G. Smith,C. -T. Liang,T.-M.Chen,C.-T. Liang
DOI: https://doi.org/10.48550/arXiv.1310.6086
2013-10-23
Mesoscale and Nanoscale Physics
Abstract:We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By apply a high source-drain voltage Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs with the presence of high electric field and perpendicular magnetic field..