Quantum Transport in Chemically-modified Two-Dimensional Graphene: From Minimal Conductivity to Anderson Localization

Nicolas Leconte,Aurélien Lherbier,François Varchon,Pablo Ordejon,Stephan Roche,Jean-Christophe Charlier

DOI: https://doi.org/10.1103/PhysRevB.84.235420

2011-11-16

Abstract:An efficient computational methodology is used to explore charge transport properties in chemically-modified (and randomly disordered) graphene-based materials. The Hamiltonians of various complex forms of graphene are constructed using tight-binding models enriched by first-principles calculations. These atomistic models are further implemented into a real-space order-N Kubo-Greenwood approach, giving access to the main transport length scales (mean free paths, localization lengths) as a function of defect density and charge carrier energy. An extensive investigation is performed for epoxide impurities with specific discussions on both the existence of a minimum semi-classical conductivity and a crossover between weak to strong localization regime. The 2D generalization of the Thouless relationship linking transport length scales is here illustrated based on a realistic disorder model.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

### Problems the paper attempts to solve

This paper aims to explore the influence of chemical modification (especially epoxy defects) on the charge - transport properties of two - dimensional graphene materials. Specifically, by constructing a complex tight - binding model and combining first - principles calculations, the author studied the transport properties of different forms of graphene after introducing random disorder and chemical modification.

The main problems include:
1. **Existence of minimum conductivity**: Researchers hope to verify whether there is a minimum semi - classical conductivity and whether this phenomenon is related to the disorder in graphene.
2. **Transition from weak localization to strong localization**: The article explores the transition process of the material from weak localization to strong localization (Anderson localization) as the defect density and carrier energy change.
3. **Quantification of transport length scales**: Through the Kubo - Greenwood method, researchers attempt to obtain the main transport length scales (such as the mean - free - path and the localization length) and analyze how these lengths change with the defect density and carrier energy.

### Key points summary
- **Research object**: Chemically modified two - dimensional graphene materials, especially graphene containing epoxy defects.
- **Research method**: Use the tight - binding model and first - principles calculations, combined with the Kubo - Greenwood method to simulate the transport properties.
- **Research goal**: Understand the influence of disorder and chemical modification on the electronic transport properties of graphene, especially the minimum conductivity and localization phenomena.

### Formula explanation
The formulas involved in the paper are mainly used to describe transport properties and quantum transport phenomena, for example:

- **Diffusion coefficient**:
\[
D(t)=D_{x}(t)+D_{y}(t) = 2D_{x}(t)
\]
\[
D_{x}(t)=\frac{\Delta X^{2}(t)}{t}
\]
\[
\Delta X^{2}(E,t)=\frac{\text{Tr}\left[\delta(E - \hat{H})\left|\hat{X}(t)-\hat{X}(0)\right|^{2}\right]}{\text{Tr}\left[\delta(E - \hat{H})\right]}
\]

- **Mean - free - path and semi - classical conductivity**:
\[
\ell_{e}(E)=\frac{D_{\text{max}}(E)}{2v(E)}
\]
\[
\sigma_{\text{sc}}(E)=\frac{1}{4e^{2}\rho(E)}D_{\text{max}}(E)
\]

These formulas help researchers quantitatively analyze the behavior of electron transport in graphene, especially in the presence of disorder and chemical modification.

### Conclusion
Through the above research, the paper reveals the important influence of chemical modification on the transport properties of graphene. Especially at high defect densities, the material may change from a metallic state to an insulating state (Anderson localization). These findings are of great significance for understanding and designing graphene - based nano - electronic devices.