Abstract:The discovery of two-dimensional (2D) materials possessing switchable spontaneous polarization with atomic thickness opens up exciting opportunities to realize ultrathin, high-density electronic devices with potential applications ranging from memories and sensors to photocatalysis and solar cells. First-principles methods based on density functional theory (DFT) have facilitated the discovery and design of 2D ferroelectrics (FEs). However, DFT calculations employing local and semilocal exchange-correlation functionals failed to predict accurately the band gaps for this family of low dimensional materials. Here, we present a DFT+U+V study on 2D FEs represented by α-In2Se3 and its homologous III2-VI3 compounds with both out-of-plane and in-plane polarization, using Hubbard parameters computed from first principles. We find that ACBN0, a pseudohybrid density functional that allows self-consistent determination of U parameters, improves the prediction of band gaps for all investigated 2D FEs with a computational cost much lower than the Heyd-Scuseria-Ernzerhof hybrid density functional. The intersite Coulomb interaction V becomes critical for accurate descriptions of the electronic structures of van der Waals heterostructures such as bilayer In2Se3 and In2Se3/InTe. Pertinent to the study of FE-based catalysis, we find that the application of self-consistent U corrections can strongly affect the adsorption energies of open-shell molecules on the polar surfaces of 2D FEs.

What problem does this paper attempt to address?

The paper aims to address the issue of predicting the electronic structure of 2D ferroelectric materials, particularly how to accurately describe the band gap and other electronic properties of these materials within the framework of Density Functional Theory (DFT). Specifically, the paper focuses on the following points: 1. **Background and Challenges**: - 2D ferroelectric materials have garnered significant attention due to their ultra-thin characteristics and potential applications (such as memory devices, sensors, photocatalysts, and solar cells). - Methods based on Density Functional Theory (DFT) have limitations in predicting the band gaps of these materials, especially when using local or semi-local exchange-correlation functionals. 2. **Research Objectives**: - Propose a cost-effective and accurate first-principles method to predict the electronic properties of 2D ferroelectric materials. - Investigate the impact of self-consistent Hubbard parameters (U parameters) on the electronic structure of 2D ferroelectric materials. 3. **Research Methods**: - Use the DFT +U method, combined with self-consistent Hubbard parameters (calculated through the ACBN0 method), to improve band gap predictions. - Compare the U values obtained from different schemes (such as LR-cDFT, DFPT, and ACBN0) and their impact on the band gap. - Explore the importance of interlayer interaction V, particularly its role in van der Waals heterostructures. 4. **Specific Materials**: - Study α-In₂Se₃ and its homologous III₂-VI₃ compounds, which exhibit in-plane and out-of-plane polarization characteristics. 5. **Main Findings**: - The ACBN0 method performs excellently in calculating U parameters, significantly improving band gap prediction results. - Interlayer interaction V is crucial for accurately describing the electronic structure of van der Waals heterostructures (such as bilayer In₂Se₃ and In₂Se₃/InTe). - The use of self-consistent U parameters is important for quantifying the surface adsorption energy of 2D ferroelectric materials. In summary, this paper aims to improve the accuracy of predicting the electronic properties of 2D ferroelectric materials by enhancing the DFT +U method and validating the effectiveness of self-consistent Hubbard parameters.

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