A simple method for monitoring uniformity of epitaxial semiconductor structures

G.G.Kozlov

DOI: https://doi.org/10.48550/arXiv.cond-mat/0608503

2006-08-23

Abstract:A simple method for visualization of nonuniformity of planar MBE structures is proposed. The method is based on measuring the relief of the photo-EMF. The method can be applied to a wide variety of semiconductor structures and does not require any expensive equipment.

Materials Science

What problem does this paper attempt to address?

Uniform Electron Emission from <tex>$\text{SiO}_{\mathrm{X}}$</tex> Tunneling Diode Arrays under Rough Vacuum

Fangyuan Zhan,Xianlong Wei

DOI: https://doi.org/10.1109/IVEC56627.2023.10157240

2023-01-01

Abstract:Uniform electron emission (EE) under rough vacuum of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\sim 10^{-2}$</tex> Pa from on-chip micro-emitter arrays based on <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{SiO}_{\mathrm{x}}$</tex> tunneling diodes (STDs) in electroformed <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{SiO}_{\mathrm{x}}$</tex> is reported. Here, we provide a unique means to visually resolve the spatial distribution of EE from STD arrays and emitter-to-emitter uniformity at the microscale resolution via accompanied light emission. Benefiting from good emitter-to-emitter uniformity and low pressure sensitivity of EE from STD arrays, improved emission performances is obtained.
A new method for high resolution curvature measurement applied to stress monitoring in thin films

Sergey Grachev,Quentin Herault,Jun Wang,Matteo Balestrieri,Herve Montigaud,Remi Lazzari,Iryna Gozhyk

DOI: https://doi.org/10.1088/1361-6528/ac4a2a

IF: 3.5

2022-01-01

Nanotechnology

Abstract:By combining the well-known grid reflection method with a digital image correlation algorithm and a geometrical optics model, a new method is proposed for measuring the change of curvature of a smooth reflecting substrate, a common reporter of stress state of deposited layers. This tool, called Pattern Reflection for Mapping of Curvature (PReMC), can be easily implemented for the analysis of the residual stress during deposition processes and is sufficiently accurate to follow the compressive-tensile-compressive stress transition during the sputtering growth of a Ag film on a Si substrate. Unprecedented resolution below 10(-5) m(-1) can be reached when measuring a homogeneous curvature. A comparison with the conventional laser-based tool is also provided in terms of dynamical range and resolution. In addition, the method is capable of mapping local variations in the case of a non-uniform curvature as illustrated by the case of a Mo film of non-uniform film thickness under high compressive stress. PReMC offers interesting perspectives for in situ accurate stress monitoring in the field of thin film growth.
Metrology of Sub-0.5 Mu M Silicon Epitaxial Films

WZ Chen,R Reif

DOI: https://doi.org/10.1116/1.581348

1998-01-01

Abstract:Non-destructive thickness measurement of sub-0.5 mu m silicon epitaxial films has been performed using spectroscopic ellipsometry (SE) in the near infrared to visible range (0.75-3 eV). The undoped epitaxial films were grown on heavily doped substrates by chemical vapor deposition at 700-900 degrees C. The effect of heavy doping on the optical properties of crystalline silicon in the spectral range 0.75-3 eV is precisely described by the Drude free carrier model. It is shown that SE can simultaneously determine the substrate dopant concentration, the thicknesses of the epitaxial film and native oxide, and if present, the thickness of the transition layer between the epitaxial film and the substrate. The epitaxial film thicknesses measured by SE were in excellent agreement with results of secondary ion mass spectrometry (SIMS). The substrate dopant concentrations measured by SE also agree well with SIMS results for n-type substrates, but are consistently higher than SIMS values for p-type substrates. It was also demonstrated that SE can be used for process monitoring in low temperature silicon epitaxy. This study identifies a non-destructive thickness measurement technique for sub-0.5 mu m silicon epitaxial films which are expected to be widely used in future semiconductor devices. (C) 1998 American Vacuum Society. [S0734-2101(98)03904-9].
Effect of Light Source Uniformity for Imaging Ellipsometry Measurements

Xiang'an Zhou,Mingyang Wei,Yueming Wang,Zhen Xu,Yating Han,Jie Lian

DOI: https://doi.org/10.1016/j.optcom.2023.129692

2023-01-01

Abstract:Recently, imaging ellipsometry shown a wide range of applications in a tremendous number of fields, such as material science and biomedicine. Better imaging quality helps improve measurements accuracy. However, light source of present imaging ellipsometer is usually non-uniform and its non-uniformity contributes to the systematic error. The dual microlens arrays (MLAs) can shape the non-uniform beam into a flat-field beam, effectively improving the uniformity of the light source. We simulated and calculated the ellipsometric parameters by non-uniform illumination and uniform illumination. The simulated wavelength was 400-700 nm. Mean squared error (MSE) was used to quantify the accuracy of the measurement results. The results show that a more uniform light source helps to improve the signal-to-noise ratio and measurement accuracy.
Growth and Electro-Optical Characteristics of CdSe / GaAs Epilayers Prepared by Electron Beam Epitaxy

Deren Yang,Y. J. Shin,C. H. Lee,Youn-Jeong CHOI,Peng Yu

1997-01-01

Abstract:An improved technique based upon an electron beam evaporation system has been developed to prepare cubic thin films In crystalline semiconductors. Zinc blonde CdSe epilayers were grown on GaAs(100) substrate by an e-beam evaporation method. The lattice parameter obtained from (400) reflection is , which is in excellent agreement with the value reported in the literature for zinc blonde CdSe. The orientation of the as-grown CdSe epilayer is determined by electron channeling patterns. The crystallinity of epitaxial CdSe layers were investigated on the double crystal X-ray rocking curve. The carrier concentration and mobility of epilayers deduced by Hall effect measurement are about , at room temperature, respectively. The photocurrent spectrum peak of the epilayer at 30 K exhibits a sharp change at 1.746 eV due to the free exciton of cubic CdSe.
Dynamical Calculations of RHEED Intensity Evolution During MBE Growth

L. -M. Peng,M. J. Whelan

DOI: https://doi.org/10.1017/s0424820100135605

1991-01-01

Abstract:Reflection high energy electron diffraction (RHEED) has become well established as one of the most powerful and versatile techniques for growth and surface studies of semiconductor films prepared by molecular beam epitaxy (MBE). In particular the technique of RHEED intensity oscillations has been used routinely to calibrate beam fluxes and alloys composition and to control the thicknesses of quantum wells and superlattice layers.Although several interpretations have been proposed for the strong oscillations in RHEED intensity during MBE growth, full dynamical calculations have been done only for an artificial surface consisting of a periodic array of surface steps. The enormous amount of computation involved prevents the dynamical theory being applied to a more realistic epitaxically growing system. In this paper we report a simple and practical method for calculating dynamical RHEED from MBE growing surfaces.We first consider epitaxial growth on a low-index surface. The growth is simulated by using a perfect layer growth model and a diffusive growth model.
Monitoring growth with X-ray diffraction

DOI: https://doi.org/10.1098/rsta.1993.0108

1993-09-15

Abstract:With the introduction of high intensity synchrotron radiation sources, X-ray diffraction has become established as a powerful probe of surface crystallography. Many surface structures have been solved with progressively larger unit meshes. More recently, the technique has been extended to provide real time monitoring of surfaces during epitaxial growth. The weak scattering of X-rays allows a simple interpretation of measured intensities through the kinematic approximation, thus giving a direct and immediate insight into the atomic geometry. The technique is not limited to the solid-vacuum interface and has potentially wide application. Thus it may be used to monitor the growth in a OMVPE reaction chamber and can probe atomic arrangements at buried interfaces such as a delta doping layer. The use of X-ray scattering for the study of epitaxial growth on semiconductor surfaces is reviewed with examples taken from recent work.
Comparison between optical techniques for the measurement of the surface electric field in (100) oriented GaAs

Z. Yang,Y. H. Chen,Yuqi Wong

DOI: https://doi.org/10.1063/1.122192

IF: 4

1998-09-14

Applied Physics Letters

Abstract:Three optical spectroscopic techniques commonly used for the measurement of the surface electric field (SEF) of semiconductors, namely photoreflectance (PR) near the E0 energy and near the E1 energy, and the linear electro-optic (LEO) effect of reflectance difference spectroscopy near the E1 energy, are compared on a series of (100) oriented GaAs layered structures. The LEO strength is found to be linearly proportional to the SEF obtained from the PR oscillation period near the E0 energy for samples with a single space charge region in which the field is uniform over the light penetration depth near E1(∼20 nm). The LEO strength remains proportional to the SEF for samples with multiple space charge regions while the PR period near E0 no longer reflects the true SEF. The SEF value estimated from the line width of PR near the E1 energy is quite unreliable because both the electric field and the impurity scattering broaden the line.

physics, applied
Optimization Theory and Application of Epitaxial Layer Thickness Uniformity in Vertical MOCVD Chamber with Multiple MO Nozzles

Li Jian-Jun,Cui Yu-Zheng,Fu Cong-Le,Qin Xiao-Wei,Li Yu-Chang,Deng Jun,

DOI: https://doi.org/10.7498/aps.73.20231555

IF: 0.906

2024-01-01

Acta Physica Sinica

Abstract:MOCVD (Metal Organic Chemical Vapor Deposition) is a key means of heterojunction semiconductor material epitaxy, the uniformity of its epitaxial layer thickness will directly affect the yield of the product, especially the vertical cavity surface emitting devices, which have a higher requirement for thickness uniformity. For the multi-MO nozzle vertical reaction cavity MOCVD, this paper combines theory and experiment to give an effective method to improve the epitaxial layer thickness uniformity by adjusting the flow rate of each MO nozzle. Firstly, each MO source nozzle is equivalent to an evaporation surface source, and an equivalent height is introduced to cover the relevant epitaxial parameters of MOCVD and the quantitative relationship between the epitaxial layer thickness and the flow rate of each MO source nozzle is established by taking three MO source nozzles as an example. After that, the model parameters were extracted by fitting using the least squares method based on the experimentally measured epitaxial layer thickness distribution results. Finally, based on the extracted model parameters, a method to optimize the epitaxial layer thickness uniformity is given. Accordingly, the AlGaAs resonant cavity structure, which is easy to accurately test the thickness, was designed and epitaxially grown using the EMCORE D125 MOCVD system, and the statistical results of the mapping reflection spectra of the 4-inch epitaxial wafers were that the average wavelength of the cavity mode was 651.89 nm, with a standard deviation of 1.03 nm, and thickness uniformity of 0.16% was achieved. At the same time epitaxial growth of GaInP quantum well structure, 4-inch epitaxial wafers mapping Photoluminescence spectrum statistics for the average peak wavelength of 653.3 nm, the standard deviation of only 0.46 nm, and peak wavelength uniformity of 0.07%. Whether it is the cavity mode wavelength or quantum well peak wavelength uniformity, it fully meets the requirements of vertical cavity surface emitting devices. The method of adjusting epitaxial layer thickness uniformity proposed in this paper is simple, effective, and fast, and it can be further extended to vertical reaction cavity MOCVD systems with more than four MO nozzles.

physics, multidisciplinary
In-situ Monitoring of Si and SiGe Growth on Si(001) Surfaces During Gas-Source Molecular Beam Epitaxy Using Reflectance Anisotropy

J Zhang,AK Lees,AG Taylor,D Raisbeck,N Shukla,JM Fernandez,BA Joyce,ME Pemble

DOI: https://doi.org/10.1016/0022-0248(96)00010-3

IF: 1.8

1996-01-01

Journal of Crystal Growth

Abstract:Reflectance anisotropy (RA) and reflection high energy electron diffraction (RHEED) were used simultaneously to study the growth of Si and SiGe on Si(001) surfaces by gas-source molecular beam epitaxy (GSMBE). These surfaces are dimerised and have a domain structure created by the orthogonal alignment of dimers on terraces separated in height by a04. Comparison between the RA and RHEED measurements reveals the origin of dynamic changes in the RA response to be the periodic changes in domain coverages on singular surfaces caused by growth under a monolayer-by-monolayer mode. It also demonstrates that RA is a more direct measure of domain coverage variations on the Si(001) surface compared with RHEED, which may suffer from effects of ordering and multiple scattering. The RA technique is used to investigate domain coverage variations as a function of temperature and following growth interruption. It is shown that there is no significant change in the domain coverage at 600°C during growth interruption, consistent with Monte Carlo simulation. This is despite the occurrence of migration of adatoms/islands as indicated by the recovery of specular beam intensity during simultaneous RHEED measurements. The temperature dependence of the dynamic change in RA response is interpreted as a growth mode change at high temperatures and change in the electronic configuration of the dimers due to chemisorbed hydrogen at low temperatures. The changes in the RA response during deposition of SiGe are also investigated as a function of Ge concentration at 600°C growth temperature.
Spectroscopy of Semiconductor Heteroepitaxial Structures Based on InGaAs for the Development of NIR Photodetectors

A. M. Kosyakova,V. S. Kovshov,M. O. Mozhaeva

DOI: https://doi.org/10.1134/s1064226923140103

2024-03-09

Journal of Communications Technology and Electronics

Abstract:Studies and analysis of samples with heteroepitaxial structure based on a InGaAs solid solution grown by molecular beam epitaxy on a GaAs substrate are presented. The composition and thickness of the layers of the structure were determined by photoluminescent spectroscopy at room temperature and scanning electron microscopy, respectively. Transmission spectra were measured on an IR Fourier spectrometer. An analytical model of the spectral characteristics of the studied structures has been developed. By solving the inverse problem, the structural parameters of the structure and the composition of the InGaAs active layer were determined by the fitting method. A comparative analysis of experimental and theoretical data showed a small spread of values for the thickness (less than 65 nm) and the composition of the absorbing layer (less than 0.04). The correctness and speed of the developed method of characterization of semiconductor structures without plate destruction is shown.

telecommunications,engineering, electrical & electronic
A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers

Yujie Yan,Jun Huang,Lei Pan,Biao Meng,Qiangmin Wei,Bing Yang

DOI: https://doi.org/10.3390/mi15080954

IF: 3.4

2024-07-26

Micromachines

Abstract:A series of characterization methods involving high-resolution X-ray diffraction (HR-XRD), electron channel contrast imaging (ECCI), cathodoluminescence microscopy (CL), and atomic force microscopy (AFM) were applied to calculate the dislocation density of GaN-on-Si epitaxial wafers, and their performance was analyzed and evaluated. The ECCI technique, owing to its high lateral resolution, reveals dislocation distributions on material surfaces, which can visually characterize the dislocation density. While the CL technique is effective for low-density dislocations, it is difficult to accurately identify the number of dislocation clusters in CL images as the density increases. The AFM technique analyzes surface dislocation characteristics by detecting surface pits caused by dislocations, which are easily affected by sample and probe conditions. A prevalent method for assessing the crystal quality of GaN is the rocking curve of HR-XRD (ω-scan), which calculates the dislocation density based on the FWHM value of the curves. By comparing the above four dislocation characterization methods, the advantages and limitations of each method are clarified, which also verifies the applicability of DB=β29b2 for GaN-on-Si epitaxial wafers. This provides an important reference value for dislocation characterization in GaN-on-Si materials. The accuracy evaluation of dislocation density can truly and reliably reflect crystal quality, which is conducive to further optimization. Furthermore, this study can also be applied to other heterogeneous or homogeneous epitaxial materials.

nanoscience & nanotechnology,instruments & instrumentation,physics, applied,chemistry, analytical
Quantification of microstructural homogeneity in indium arsenide epilayers by X-ray diffraction

Sebastian Odrzywolski,Marek Andrzej Kojdecki,Sebastian Złotnik,Łukasz Kubiszyn,Jarosław Wróbel

DOI: https://doi.org/10.24425/mms.2024.149700

2024-08-19

Metrology and Measurement Systems

Abstract:In this article a complete procedure to investigate thin semiconductor plates (epitaxial layers), including high-resolution X-ray diffraction measurements, mathematical modelling of both crystalline structure and crystalline microstructure and computations to approximate solving inverse problems, is proposed and described in detail. The method is successfully applied to estimate crystalline homogeneity of a square indium-arsenide plate epitaxially-grown on gallium-arsenide substrate. To this end, the specimen is tested in nine areas around points forming a square grid. It is demonstrated that whole specimen may be regarded as a single large crystalline grain consisting of crystallites separated by small-angle boundaries. The crystallites occur as rode-like cuboids elongated in the direction perpendicular to the plate surface, with different areas of the sample and with base sizes not much differing. The mean-absolute second-order strain is very small and almost constant in the whole sample. The first-order strain also appears and, effectively, the structure of the crystalline layer is tetragonal with unit-cell parameters being smaller parallelly and larger perpendicularly to the layer surface and varying slightly in the layer. The results are presented in tables and figures and commented.

instruments & instrumentation
In Situ Monitoring of Resistivity and Carrier Concentration During Molecular Beam Epitaxy of Topological Insulator Bi2Se3

Jack Hellerstedt,J. H. Chen,Dohun Kim,William G. Cullen,C. X. Zheng,Michael S. Fuhrer

DOI: https://doi.org/10.1117/12.2033659

2013-01-01

Abstract:Bismuth selenide (Bi2Se3) is a three-dimensional strong topological insulator of particular interest due to its relatively large bulk band gap (300 meV), single set of topologically non-trivial surface states, and layered van der Waals structure. However, there are outstanding problems in isolating the surface states of interest from bulk (trivial) conduction: this problem is frequently attributed to doping from selenium vacancies, and atmospheric exposure. To address these questions, we have constructed a system capable of growing thin film bismuth selenide by van der Waals epitaxy with the additional capability to do real time, in situ transport measurements, specifically resistivity and Hall carrier density. Post growth cooling to 15 K, and controlled exposure to atmospheric dopants is possible without breaking vacuum. We have demonstrated in-situ electrical measurements of resistivity and Hall effect which allow monitoring of the charge carrier density and mobility during growth as well as post-growth without breaking vacuum.
An Improved Method for Measuring the Thickness and Concentration of Epitaxiallayer

刘志农,熊小义,付玉霞,张伟,陈培毅,钱佩信

DOI: https://doi.org/10.3969/j.issn.1003-353x.2003.11.010

2003-01-01

Abstract:In the double mesa SiGe HBT process, emitter mesas were made by RIE technology. Tokeep the external base region from damaging by plasmas and from over etching, the height of theemitter mesa must be controlled strictly. Consequently, the different heights of the emitter beforeetching and after etching have to be mastered. There have been a lot of methods for analyzing theheight and concentration of different materials, and they have their advantages and disadvantages.A new method of measuring the height and concentration of epitaxial layer simultaneously wasproposed. Simple, high efficiency and low cost are the advantages of this method.
Development of in situ characterization techniques in molecular beam epitaxy

Chao Shen,Wenkang Zhan,Manyang Li,Zhenyu Sun,Jian Tang,Zhaofeng Wu,Chi Xu,Bo Xu,Chao Zhao,Zhanguo Wang

DOI: https://doi.org/10.1088/1674-4926/45/3/031301

2024-03-13

Journal of Semiconductors

Abstract:Ex situ characterization techniques in molecular beam epitaxy (MBE) have inherent limitations, such as being prone to sample contamination and unstable surfaces during sample transfer from the MBE chamber. In recent years, the need for improved accuracy and reliability in measurement has driven the increasing adoption of in situ characterization techniques. These techniques, such as reflection high-energy electron diffraction, scanning tunneling microscopy, and X-ray photoelectron spectroscopy, allow direct observation of film growth processes in real time without exposing the sample to air, hence offering insights into the growth mechanisms of epitaxial films with controlled properties. By combining multiple in situ characterization techniques with MBE, researchers can better understand film growth processes, realizing novel materials with customized properties and extensive applications. This review aims to overview the benefits and achievements of in situ characterization techniques in MBE and their applications for material science research. In addition, through further analysis of these techniques regarding their challenges and potential solutions, particularly highlighting the assistance of machine learning to correlate in situ characterization with other material information, we hope to provide a guideline for future efforts in the development of novel monitoring and control schemes for MBE growth processes with improved material properties.

physics, condensed matter
Investigation of Dislocations and Defects in Epitaxial Lateral Overgrown GaN by Photoelectrochemical Wet Etching

F Wang,R Zhang,XQ Xiu,KL Chen,SL Gu,B Shen,YD Zheng,TF Kuech

DOI: https://doi.org/10.1016/s0167-577x(02)00988-6

IF: 3

2003-01-01

Materials Letters

Abstract:We introduce a method based on photoelectrochemical (PEC) wet etching that can conveniently investigate the defects and dislocations in laterally overgrown GaN layers by scanning electron microscopy (SEM). The image of SEM illustrates that the dislocation density in homoepitaxial growth region is much higher than in the laterally overgrown region. Also from the SEM image, we can directly identify the region with high density of defects from the perfect region. It is confirmed that the quality of GaN is greatly improved by the epitaxial lateral overgrowth (ELO) technique. The concentration of KOH solution has an effect on etching; when KOH is below 0.02 M, the photo-current increases rapidly according to KOH. After that point, it tents to remain stable at the maximum value of 55 μA. In addition, we find that the photo-current gradually decreases if the etch time is extended. It is probably because more dislocations and defects are revealed.
Pulsed laser deposition with simultaneous in situ real-time monitoring of optical spectroscopic ellipsometry and reflection high-energy electron diffraction

J. H. Gruenewald,J. Nichols,S. S. A. Seo

DOI: https://doi.org/10.1063/1.4798621

IF: 1.6

2013-04-01

Review of Scientific Instruments

Abstract:We present a pulsed laser deposition system that can monitor growth by simultaneously using in situ optical spectroscopic ellipsometry (SE) and reflection high-energy electron diffraction (RHEED). The RHEED precisely monitors the number of thin-film layers and surface structure during the deposition, and the SE measures the optical spectra of the samples simultaneously. The thin-film thickness information obtained from RHEED facilitates the SE modeling process, which allows extracting the in situ optical spectra, i.e., the dielectric functions of thin-films during growth. The in situ dielectric functions contain indispensable information about the electronic structure of thin-films. We demonstrate the performance of this system by growing LaMnO(3+δ) (LMO) thin-films on SrTiO3 (001) substrates. By using in situ SE and RHEED simultaneously, we show that real-time thickness and dielectric functions of the LMO thin-films can be effectively extracted. The simultaneous monitoring of both optical SE and RHEED offers important clues to understand the growth mechanism of atomic-scale thin-films.

instruments & instrumentation,physics, applied
Studies on Uniformity of MOVPE-Grown AlGaN/GaN HEMT Structures by Spectroscopic Ellipsometry

Guangyi Xi,Yi Luo,Lai Wang,Hongtao Li,Yang Jiang,Dong Chen,Wei Zhao,Yanjun Han,Zhibiao Hao

DOI: https://doi.org/10.1109/inow.2007.4302978

2007-01-01

Abstract:The uniformities of AIGaN/GaN HEMT structures grown by MOVPE have been studied by using spectroscopic ellipsometry. The results show that the total flow rate is the most critical growth parameter for the uniformity.
Rapid screening of molecular beam epitaxy conditions for monoclinic (InxGa1-x)2O3 alloys

Stephen Schaefer,Davi Febba,Kingsley Egbo,Glenn Teeter,Andriy Zakutayev,Brooks Tellekamp

2024-01-12

Abstract:Molecular beam epitaxy is one of the highest quality growth methods, capable of achieving theoretical material property limits and unprecedented device performance. However, such ultimate quality usually comes at the cost of painstaking optimization of synthesis conditions and slow experimental iteration rates. Here we report on high-throughput molecular beam epitaxy with rapid screening of synthesis conditions using a novel cyclical growth and in-situ etch method. This novel approach leverages sub-oxide desorption present during molecular beam epitaxy and as such should be broadly applicable to other material systems. As a proof of concept, this method is applied to rapidly investigate the growth space for the ternary alloy (InxGa1-x)2O3 on (010) oriented beta-Ga2O3 substrates using in-situ reflection high energy electron diffraction measurements. Two distinct growth regimes are identified and analyzed using machine learning image recognition algorithms, the first stabilizing a streaky 2x surface reconstruction typical of In-catalyzed beta-Ga2O3 growth, and the second exhibiting a spotty/faceted pattern typical of phase separation. Targeted growth of (InxGa1-x)2O3 is performed under conditions near the boundary of the two regimes resulting in a 980 nm thick epitaxial layer with In mole fraction up to 5.6%. The cyclical growth/etch method retains the ~1 nm surface roughness of the single crystal substrate, increases experimental throughput approximately 6x, and improves single crystal substrate utilization by >40x. The high-throughput MBE method enables rapid discovery of growth regimes for ultra-wide bandgap oxide alloys for power conversion devices operating with high efficiency at high voltages and temperatures, as well as optical devices such as ultraviolet photodetectors.

Materials Science

A simple method for monitoring uniformity of epitaxial semiconductor structures

Uniform Electron Emission from <tex>$\text{SiO}_{\mathrm{X}}$</tex> Tunneling Diode Arrays under Rough Vacuum

A new method for high resolution curvature measurement applied to stress monitoring in thin films

Metrology of Sub-0.5 Mu M Silicon Epitaxial Films

Effect of Light Source Uniformity for Imaging Ellipsometry Measurements

Growth and Electro-Optical Characteristics of CdSe / GaAs Epilayers Prepared by Electron Beam Epitaxy

Dynamical Calculations of RHEED Intensity Evolution During MBE Growth

Monitoring growth with X-ray diffraction

Comparison between optical techniques for the measurement of the surface electric field in (100) oriented GaAs

Optimization Theory and Application of Epitaxial Layer Thickness Uniformity in Vertical MOCVD Chamber with Multiple MO Nozzles

In-situ Monitoring of Si and SiGe Growth on Si(001) Surfaces During Gas-Source Molecular Beam Epitaxy Using Reflectance Anisotropy

Spectroscopy of Semiconductor Heteroepitaxial Structures Based on InGaAs for the Development of NIR Photodetectors

A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers

Quantification of microstructural homogeneity in indium arsenide epilayers by X-ray diffraction

In Situ Monitoring of Resistivity and Carrier Concentration During Molecular Beam Epitaxy of Topological Insulator Bi2Se3

An Improved Method for Measuring the Thickness and Concentration of Epitaxiallayer

Development of in situ characterization techniques in molecular beam epitaxy

Investigation of Dislocations and Defects in Epitaxial Lateral Overgrown GaN by Photoelectrochemical Wet Etching

Pulsed laser deposition with simultaneous in situ real-time monitoring of optical spectroscopic ellipsometry and reflection high-energy electron diffraction

Studies on Uniformity of MOVPE-Grown AlGaN/GaN HEMT Structures by Spectroscopic Ellipsometry

Rapid screening of molecular beam epitaxy conditions for monoclinic (InxGa1-x)2O3 alloys