An Improved Method for Measuring the Thickness and Concentration of Epitaxiallayer

刘志农,熊小义,付玉霞,张伟,陈培毅,钱佩信

DOI: https://doi.org/10.3969/j.issn.1003-353x.2003.11.010

2003-01-01

Abstract:In the double mesa SiGe HBT process, emitter mesas were made by RIE technology. Tokeep the external base region from damaging by plasmas and from over etching, the height of theemitter mesa must be controlled strictly. Consequently, the different heights of the emitter beforeetching and after etching have to be mastered. There have been a lot of methods for analyzing theheight and concentration of different materials, and they have their advantages and disadvantages.A new method of measuring the height and concentration of epitaxial layer simultaneously wasproposed. Simple, high efficiency and low cost are the advantages of this method.