Abstract:Single crystal diamonds heavily co‐doped by nitrogen and boron can form numerous excitons confirmed by photoluminescence measurements. The degraded carrier mobility of diamond can transform superconductive state into metallic state under similar carrier concentration. The mechanism of superconductivity is correlated with the exciton Bose‐Einstein condensations, which could realize higher temperature superconductive carbon materials, including graphene/diamond heterostructure. Owing to extremely large bandgap of 5.5 eV and high thermal conductivity, diamond is recognized as the most important semiconductor. The superconductivity of polycrystalline diamond has always been reported, but there are also many controversies over the existence of superconductivity in bulk single crystal diamond. Besides, it remains a question whether a metallic state exists for such a large bandgap semiconductor. Herein, a single crystal superconducting diamond with a Hall carrier concentration larger than 3 × 1020 cm−3 is realized by co‐doped of boron and nitrogen, with an extremely low resistivity of 2.07 × 10−3 Ω cm at room temperature and dominated acceptor–donor bounded exciton photoluminescence. Furthermore, it is shown that diamond can transform from superconducting to metallic state under similar carrier concentration with tuned carrier mobility degrading from 9.10 cm2 V−1 s−1 or 5.30 cm2 V−1 s−1 to 2.66 cm2 V−1 s−1 or 1.34 cm2 V−1 s−1. Through integrating graphene on a nitrogen and boron heavily co‐doped diamond, a novel transportation behavior in the monolayer graphene similar with superconducting behavior is realized through combining Andreev reflection and exciton‐mediated superconductivity, which may reveal more interesting superconducting behavior of diamond.

Superconductivity in heavily vacant diamond

First-principles Study of Nitrogen Doping and Oxygen Vacancy in Cubic PbTiO3

Superconductivity and Metallic Behavior in Heavily Doped Bulk Single Crystal Diamond and Novel Transportation Behavior at Graphene/Diamond Heterostructure

Effect of B-complexes on lattice structure and electronic properties in heavily boron-doped diamond

First Principles Investigation on the Boron-VA (VA=N, P, As, Sb) Complexes in Diamond for Possible N-Type Conductivity

Constraints on AGB models from the heavy-element composition of presolar SiC grains

First principles study of structural, electronic and vibrational properties of heavily boron-doped diamond

Orientation-dependent electric transport and band filling in hole co-doped epitaxial diamond films

First-principles Calculations for Li, P Dopants and Vacancy Defect in Ultra-Thin Hydrogenated Diamond Nanofilms: Structural, Electronic and Optical Properties

First Principles Study of Vacancy-Solute Complexes in Vanadium

Revival of superconductivity in a one-dimensional dimerized diamond lattice

Prediction of high-temperature superconductors at ambient pressure with diamond-like structures: B2CX (X = N, P)

Irradiation induced modification of the superconducting properties of heavily boron doped diamond

Superconductivity in Compression-Shear Deformed Diamond.

Superconductivity in Diamond-Like BC15

Impurity atom configurations in diamond and their visibility via scanning transmission electron microscopy imaging

Theoretical investigations of the heavily boron doped pentadiamond

The superconductivity in boron-doped polycrystalline diamond thick films

Localization and Superconductivity in Doped Semiconductors

Electronic Properties of Vacancy‐Induced Structures in AlAs/GaAs Superlattices