Growth and Properties of Ultra-Thin PTCDI-C8 Films on GaN(0001)

Katarzyna Lament,Miłosz Grodzicki,Radosław Wasielewski,Piotr Mazur,Antoni Ciszewski

DOI: https://doi.org/10.3390/cryst14030201

IF: 2.7

2024-02-21

Crystals

Abstract:Ultra-thin PTCDI-C8 films are vapor-deposited under ultra-high vacuum (UHV) conditions onto surfaces of p- or n-doped GaN(0001) samples. The X-ray photoelectron spectroscopy (XPS) results reveal a lack of strong chemical interaction between the PTCDI-C8 molecule and the substrate. Changes in the electronic structure of the substrate or the adsorbed molecules due to adsorption are not noticed at the XPS spectra. Work function changes have been measured as a function of the film thickness. The position of the HOMO level for films of thicknesses 3.2–5.5 nm has been determined. Energy diagrams of the interface between p- and n-type GaN(0001) substates and the PTCDI-C8 films are proposed. The fundamental molecular building blocks of the PTCDI-C8 films on GaN(0001), assembled by self-organization, have been identified. They are rows of PTCDI-C8 molecules stacked in "stand-up" positions in reference to the substrate, supported by the π–π bonds which are formed between the molecular cores of the molecules and monomolecular layers constituted by rows which are tilted in reference to the layer plane. The layers are epitaxially oriented. The epitaxial relation between the rows and the crystallographic directions of the substrate are determined. A model of the PTCDI-C8 film's growth on GaN(0001) substrate is proposed. The 3D islands of PTCDI-C8 molecules formed on the substrate surface during film deposition are thermodynamically unstable. The Volmer–Weber type of growth observed here is a kinetic effect. Rewetting processes are noticeable after film aging at room temperature or annealing at up to 100 °C.

materials science, multidisciplinary,crystallography

What problem does this paper attempt to address?

The main problem this paper attempts to address is the study of the growth and properties of ultrathin PTCDI-C8 films on GaN(0001) substrates. Specifically, the authors aim to explore the following aspects through experiments and characterization techniques (such as X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), scanning tunneling microscopy (STM), etc.):

1. **Effect of the substrate on film properties**: Investigate the adsorption behavior of PTCDI-C8 molecules on p-type and n-type GaN(0001) substrates, and how the substrate affects the morphology, structure, and electronic properties of the film.

2. **Chemical interactions**: Analyze the chemical interactions between PTCDI-C8 molecules and the GaN substrate, particularly whether there is strong chemical bonding.

3. **Changes in electronic structure**: Explore whether the electronic structure of the substrate or adsorbed molecules changes during adsorption, and how these changes affect the performance of the film.

4. **Energy level positions**: Measure the work function changes of PTCDI-C8 films of different thicknesses and determine the position of the HOMO energy level.

5. **Molecular self-organization**: Identify the basic molecular units formed by the self-organization of PTCDI-C8 films on GaN(0001) substrates, particularly the molecular arrangement and interlayer interactions.

6. **Growth mechanism**: Propose a growth model for PTCDI-C8 films on GaN(0001) substrates, including the kinetic processes and thermodynamic stability of film growth.

Through these studies, the authors hope to provide fundamental data and theoretical support for the application of organic semiconductors on GaN substrates, particularly in optimizing charge transport performance in organic electronic devices.