Abstract:Germanium (Ge) has many exciting material characteristics, such as high carrier mobility and narrow bandgap in the near-infrared range. Thus it is suitable for various applications. A high-quality insulating film on Ge is required to apply Ge to novel electronic devices successfully. It is well known that GeO 2 on Ge has good electrical characteristics as a gate insulator or interlayer (IL), similar to SiO 2 on Si [1]. Unlike SiO 2 , however, GeO 2 is thermodynamically unstable under atmospheric pressure at typical oxidation temperatures (~400 °C) and volatilizes as GeO [2,3]. Several methods have been developed to suppress GeO volatilization from the surface. For example, transition metals such as yttrium (Y) have been introduced into GeO 2 . Yttrium (Y)-doped GeO 2 has excellent thermal, chemical, and electrical characteristics. In the capacitance–voltage measurement, it shows a low interface state density ( D it ) and a narrow hysteresis corresponding to the border trap (BT) density ( N bt ) of gate insulators [4]. Based on the above studies, we focused on metal Y deposition with subsequent thermal oxidation as an efficient alternative method to deposit Y-oxide as a gate insulator on Ge. This method has been studied to deposit Y 2 O 3 as a gate insulator on Si [5]. Moreover, metal oxidation has been used to form various gate insulators on Ge, such as Al [6] and Hf [7]. In this study, we expect a capping layer of Y and oxidized Y to suppress GeO volatilization and stabilize the interface. We fabricated and evaluated metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (FETs) with either a thermally oxidized Y or a thermally oxidized Ge oxide layer. The structural analysis found that the insulator was divided into three layers: Y 2 O 3 , YGeO 3 , and GeO x from the top. The oxidation temperature affected only the thickness of the bottom GeO x layer. We found that the Y-oxide gate stack had better electrical characteristics and a lower D it and N bt than the thermally oxidized GeO x insulator. In contrast, the D it –energy distribution and N bt temperature dependence of the Y-oxide gate insulator were similar to those of the GeO x gate insulator. We examined these observations, including the structural analysis results. We found that thermally oxidized Y had a distinct advantage over thermally oxidized Ge oxide: the possibility of controlling the structure and electrical characteristics of the Ge gate stack, such as the GeO x thickness and the BT signal origin. [1] H. Matsubara et al., Appl. Phys. Lett. 93 (2008) 032104. https://doi.org/10.1063/1.2959731 [2] S. K. Wang et al., J. Appl. Phys. 108 (2010) 054104. https://doi.org/10.1063/1.3475990 [3] S. K. Sahari et al., J. Phys. Conf. Ser. 417 (2013) 012014. https://doi.org/10.1088/1742-6596/417/1/012014 [4] C. Lu et al., J. Appl. Phys. 116 (2014) 174103. https://doi.org/10.1063/1.4901205 [5] M. Gurvitch et al., Appl. Phys. Lett. 51 (1987) 919. https://doi.org/10.1063/1.98801 [6] T. Ohno, et al., Appl. Phys. Lett. 107 (2015) 133107. https://doi.org/10.1063/1.4932385 [7] T. Hosoi et al., Microelectron. Eng. 109 (2013) 137. https://doi.org/10.1016/j.mee.2013.03.115 [8] W.-C. Wen et al., Mat. Sci. Semicond. Processing, accepted (2023).

Effect of Yttrium Treatment on Germanium-Oxide-Based Interfacial Layer of Ge P-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated Through in Situ Plasma-Enhanced Atomic Layer Deposition

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

(Invited) Thermally Oxidized Yttrium Oxide on Germanium for n-Mos Capacitor and Field-Effect Transistor

High Performance Atomic-Layer-Deposited \(LaLuO_3/Ge\)-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Thermally Grown \(GeO_2\) as Interfacial Passivation Layer

Fabrication and characterization of germanium n-MOS and n-MOSFET with thermally oxidized yttrium gate insulator: Formation of underlying germanium oxide and its electrical characteristics

Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs

Atom-Scaled Hafnium Doping for Strengthening the Germanium Oxide Interfacial Layer of The Gate Stack of Germanium P-Type Metal-Oxide-Semiconductor Field Effect Transistor

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

Suppression of Ald-Induced Degradation of Ge Mos Interface Properties by Low Power Plasma Nitridation of Geo2

Tuning Schottky Barrier Height in Metal/n-Type Germanium by Inserting an Ultrathin Yttrium Oxide Film

Effect of passivation layers in bilayer with ZrO2 on Ge substrate for improved thermal stability

Mos Interface Control Technologies for Iii-V/Ge Channel Mosfets

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

Self-Induced Ge-Doped HfO 2 Applied to Ge Stacked Nanowires Ferroelectric Gate-all-Around Field-Effect Transistor with Steep Subthreshold Slope Under O 3 Treatment with GeO 2 as Interfacial Layer

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

Impact of Nitrogen Plasma Passivation on the Interface of Germanium Mos Capacitor

Ultrathin Geoxny Interlayer Formed By In Situ Nh3 Plasma Pretreatment For Passivation Of Germanium Metal-Oxide-Semiconductor Devices