Abstract:This paper presents a low-noise amplifier (LNA) with superior linearity for ultra-wideband (UWB) purposes. Linearity is a significant parameter for 5G receivers because the 5G new radio bands overlap with the UWB frequency band. In the proposed design, the Complementary Derivation Superposition (CDS) and the Shunt-Feedback Common Source techniques were combined using a novel circuit topology. The active and passive feedback captured the nonlinear signal, and the auxiliary PMOS transistor helped to realize low noise figure (NF), high gain, and highly linearity. The inductors at the gate and drain, in cooperation with the LC filter, were selected to perform the Input Impedance Matching (IIM) over the entire UWB frequency band. Finally, the novel structure was designed and verified by post-layout simulations using the 65-nm CMOS technology. The results obtained from the Post-Layout simulations in the whole of UWB band (from 3.1 to 10.6 GHz) are as follows: the power gain and NF are 12.4 ± 0.3 dB and 3.6 ± 0.3 dB, respectively. The S11 parameter is better than − 10 dB in the desired band. The circuit consumes 10.56 mW under 1.2 V supply voltage. The maximum and average of third-order Input Intercept Point (IIP3) are 17.93 dBm and 6.22 dBm, respectively. The layout size of the proposed LNA is 0.827 mm2. In addition, a compressive Process-Voltage-Temperature (PVT) analysis is presented, that proves the circuit robustness against process, voltage and temperature variations.

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