Abstract:Ferroelectric films in the paraelectric phase exhibit two undesirable properties: hysteresis in the voltage-capacitance characteristics and a significant relaxation time of the capacitance. Our experiments show that suppression of both of these is achieved by using ultraviolet (UV) radiation with wavelengths corresponding to the material forbidden gap. Experimentally we also observed UV radiation induced modulation of thin film permittivity without an applied electric field. The observed phenomena are believed to have the same origin: UV light causes generation of non-equilibrium charge carriers and space charge redistribution inside thin ferroelectric films.

What problem does this paper attempt to address?

The problems that this paper attempts to solve are two unfavorable characteristics of ferroelectric thin films in the paraelectric phase: 1. **Hysteresis in the voltage - capacitance characteristic (C - V characteristic)**: Theoretically, ferroelectric materials should not exhibit hysteresis in the paraelectric phase. However, the C - V characteristic curves observed in experiments have obvious hysteresis loops, which lead to an incompletely reversible change in capacitance values. 2. **Significant relaxation time of capacitance**: The capacitance response time of ferroelectric thin films in the paraelectric phase is long, far from reaching the theoretical prediction of the order of several picoseconds. This slow relaxation time limits the application of ferroelectric materials in high - frequency electronic devices. To solve these problems, the author proposes and verifies a method using ultraviolet (UV) radiation. By selecting ultraviolet light whose wavelength corresponds to the band - gap energy of the material, the above two unfavorable characteristics can be effectively suppressed. Specifically, ultraviolet light can generate non - equilibrium charge carriers, and these carriers can redistribute the space charge inside the thin film, thereby improving the electrical properties. ### Main findings 1. **Elimination or significant suppression of hysteresis**: Under ultraviolet light irradiation, the C - V characteristic curves of ferroelectric thin films no longer exhibit hysteresis, and the capacitance values become reversible with the change of voltage. 2. **Significant shortening of relaxation time**: Ultraviolet light irradiation greatly reduces the relaxation time of capacitance, approaching the theoretical limit. 3. **Dielectric constant modulation without an applied electric field**: Even when the applied voltage is zero, ultraviolet light irradiation can modulate the dielectric constant of ferroelectric thin films. These results indicate that ultraviolet light can change the local electric field and dielectric properties in ferroelectric thin films by generating non - equilibrium charge carriers, thereby significantly improving their electrical properties. This method provides new possibilities for the application of ferroelectric materials in microwave electronic devices.

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