Abstract:In the present work process methodology was optimized to synthesize oriented barium strontium titanate (BST) (50/50) and (60/40) thin films on strontium titanate (100) and lanthanum aluminate (LAO) (100) substrates by using the chemical solution deposition technique. These films were characterized in terms of their phase formation behavior and structural growth characteristics using x-ray diffraction and atomic force microscopy. A tentative mechanism of the epitaxial growth has been proposed. Films were also characterized in terms of their dielectric properties. The high tunability and low dielectric loss of these films make them attractive for fabricating tunable dielectric devices. Accordingly, we have fabricated eight element coupled microstrip phase shifters and tested them in terms of their degree of phase shift and insertion loss characteristics. An insertion loss of 8.435 dB, phase shift in the order of 320° (2.6–14.5 V/μm) and κ factor (phase shift/dB of loss) of about 38.0°/dB was achieved in BST (60/40) films deposited on LAO (100) substrate which is comparable to the films grown by other film deposition techniques reported in the literature. The microstructure of the sol–gel derived films show surface porosity which may be responsible for the low dielectric strength of these films. Presently, we are studying the sintering mechanism and kinetics of these films in order to improve the density which is believed to further improve the phase shift and lower insertion loss to result in an improved tunability.

FERROELECTRIC FILM PHASE SHIFTER UNDER ELEVATED MICROWAVE POWER

Planar Tunable High-Temperature Superconductor Microwave Broadband Phase Shifter with Patterned Ferroelectric Thin Film

Giant Electrocaloric Effect in Ferroelectric Ultrathin Films at Room Temperature Mediated by Flexoelectric Effect and Work Function

Epitaxial Growth Of Dielectric Ba0.6sr0.4tio3 Thin Film On Mgo For Room Temperature Microwave Phase Shifters

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Ferroelectric BaTiO3/SrTiO3 Multilayered Thin Films for Room-Temperature Tunable Microwave Elements.

Recent Progress of (ba,sr)tio 3 Thin Films for Tunable Microwave Devices

Dielectric Tunability of Vertically Aligned Ferroelectric-Metal Oxide Nanocomposite Films Controlled by Out-of-plane Misfit Strain

Ferroelectric Lumped Element Filter/Switch For Microwave Applications

Sol–gel derived grain oriented barium strontium titanate thin films for phase shifter applications

Effects of Fringing Capacitor on Ferroelectric Phase Shifter

Improvement of dielectric loss of doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices

Low voltage control of magnetism in BaFe 10.2 Sc 1.8 O 19 /BaTiO 3 bilayer epitaxial thin film at temperatures up to 390 K

Room-temperature ferroelectricity in strained SrTiO3

Ferroelectric (pb,sr)tio3 Epitaxial Thin Films on (001) MgO for Room Temperature High-Frequency Tunable Microwave Elements

Room-temperature stabilizing strongly competing ferrielectric and antiferroelectric phases in PbZrO3 by strain-mediated phase separation

Probing Ferroelectric Phase Transitions in Barium Titanate Single Crystals via $\it{in-situ}$ Second Harmonic Generation Microscopy

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

Enhanced Dielectric Properties of (Ba,sr)tio3//ba(zr,ti)o-3 Heterostructures with Optimized Structure Design

Microwave Dielectric Properties of Mn-doped (ba,sr)tio3//ba(zr,ti)o3 Multilayered Thin Films: Optimization of Designed Structure

A Highly Strained Phase in PbZr0.2Ti0.8O3 Films with Enhanced Ferroelectric Properties