Abstract:The controlled depletion of electrons in semiconductors is the basis for numerous devices. Reactive-ion etching provides an effective technique for fabricating both classical and quantum devices. However, Fermi level pinning can occur, and must be carefully considered in the development of small devices, such as quantum dots. Because of depletion, the electrical size of the device is reduced in comparison with its physical dimension. To investigate this issue, we fabricate several types of devices in silicon-germanium heterostructures using two different etches, CF$_4$ and SF$_6$. We estimate the depletion width associated with each etch by two methods: (i) conductance measurements in etched wires of decreasing thickness (to determine the onset of depletion), (ii) capacitance measurements of quantum dots (to estimate the size of the active region). We find that the SF$_6$ etch causes a much smaller depletion width, making it more suitable for device fabrication.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: in the silicon - germanium (SiGe) heterostructure, when manufacturing quantum dots by reactive ion etching (RIE) technology, the influence of the width of the two - dimensional electron gas (2DEG) depletion layer caused by the etching process on the device performance. Specifically, the research aims to understand the influence of different etching gases (such as CF₄ and SF₆) on the width of the 2DEG depletion layer, and explore how these influences act on the electrical characteristics of miniaturized devices (such as quantum dots). ### Background of the paper and problem description 1. **Influence of the 2DEG depletion layer**: - In semiconductor devices, especially in nano - scale devices such as quantum dots, the width of the 2DEG depletion layer has a significant impact on the electrical size of the device. Due to etching damage, the crystal structure may be destroyed, resulting in the surface state fixing the Fermi level, thereby causing the depletion of the local 2DEG. - This depletion effect makes the effective electrical size of the device smaller than its physical size, and thus affects the performance of the device, especially more obvious in miniaturized devices. 2. **Selection of etching gases**: - The paper compares two different etching gases (CF₄ and SF₆) and studies their influence on the width of the 2DEG depletion layer. CF₄ etching results in a larger depletion layer width (about 200 - 250 nm), while SF₆ etching hardly produces a depletion layer (the depletion layer width is close to zero). - Selecting the appropriate etching gas is crucial for manufacturing high - performance miniaturized devices, especially for quantum dot devices in quantum computing applications. ### Research methods 1. **Conductivity measurement**: - By etching wires of different widths (from 200 nm to 1350 nm) and measuring their conductivity, the width of the 2DEG depletion layer is estimated. As the wire width decreases, the 2DEG will eventually stop conducting, and the wire width at this time is twice the width of the depletion layer. 2. **Capacitance measurement**: - Capacitance measurement is carried out on the etched quantum dots, and through fitting the simulation and experimental data, the effective electrical size of the quantum dots and their corresponding depletion layer widths are estimated. ### Conclusions - CF₄ etching results in a significant width of the 2DEG depletion layer (about 200 - 250 nm), while SF₆ etching has almost no depletion layer. - SF₆ etching is more suitable for manufacturing miniaturized devices because it can keep the effective electrical size of the device close to its physical size. - Through numerical simulation, the research finds that the width of the depletion layer is locally changed in the etched device, which depends on factors such as surface state density and charge distribution. In summary, this paper studies the influence of different etching gases on the width of the 2DEG depletion layer through experiments and simulations, providing an important basis for optimizing the manufacturing process of miniaturized semiconductor devices.

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