Anjana Bagga,P. K. Chattopadhyay,Subhasis Ghosh
Abstract: Formation of excitonic states in quantum dots of nitride based III-V semiconductors GaN and AlN including coulomb and exchange interactions are investigated. Dark exciton formation is found to occur for both GaN quantum dots(QDs) with wurtzite structure having positive crystal field splitting and GaN and AlN QDs with zero crystal field splitting with a transition from dark to bright exciton at about 40Å. In wurtzite AlN QDs with negative crystal field splitting the splitting between the dark and bright excitonic states is very small and vanishes at about 15Å.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the formation mechanism of exciton states in nitride quantum dots (Quantum Dots, QDs), especially the formation and conversion of dark excitons and bright excitons. Specifically, the author studied the changes in exciton states in quantum dots based on III - V nitride semiconductor materials (such as GaN and AlN) due to the influence of factors such as crystal - field splitting, Coulomb interaction, exchange interaction, and dielectric effect.
### Research Background and Problems
1. **Red - shift Phenomenon**: An interesting property of quantum dots is that the emission peak has a red - shift relative to the absorption spectrum, and this red - shift is related to the quantum - dot size. As the radius increases, the red - shift gradually decreases and disappears after a certain radius.
2. **Dark Excitons and Bright Excitons**: In some cases, excitons cannot decay to the top of the valence band through direct dipole transitions but need phonon - assisted transitions, resulting in a red - shift of the emission spectrum. Such excitons are called dark excitons. Conversely, excitons that can directly emit light through dipole transitions are called bright excitons.
### Research Objectives
- **Understand the Formation of Exciton States**: Study the formation mechanisms of dark excitons and bright excitons in nitride quantum dots.
- **Influence of Crystal Structures**: Explore the influence of different crystal structures (such as wurtzite and zinc - blende structures) on exciton states.
- **Role of Dielectric Effects**: Analyze the influence of dielectric - constant mismatch on the energy and properties of exciton states.
- **Influence of Exchange Interactions**: Study the influence of electron - hole exchange interactions on the splitting of exciton states.
### Main Findings
1. **Wurtzite GaN Quantum Dots (Positive Crystal - Field Splitting)**:
- For smaller radii (< 50 Å), the dark exciton is the main state.
- As the radius increases, the bright exciton gradually becomes the ground state. In particular, when there is no dielectric mismatch, the transition from the dark exciton to the bright exciton occurs at approximately \( R \sim 50 \) Å.
2. **Zinc - blende GaN Quantum Dots (Zero Crystal - Field Splitting)**:
- Initially, the dark exciton is dominant, but it transitions to the bright exciton at around \( R \sim 35 \) Å.
- Dielectric mismatch will advance this transition to a smaller radius (such as \( R \sim 20 \) Å).
3. **Wurtzite AlN Quantum Dots (Negative Crystal - Field Splitting)**:
- Throughout the entire radius range, the bright exciton is always the ground state, and there are no dark excitons.
### Formula Summary
- **Exciton Wave Function**:
\[
\psi_e(r) = j_0(k_0 r) Y_{00}(\theta, \phi) |S_\alpha\rangle
\]
where \( j_0 \) is the spherical Bessel function and \( Y_{00} \) is the spherical harmonic function.
- **Hamiltonian**:
\[
H = H_e + H_h + H_{so} + V_{e - h} + V_{Pol - s} + V_{Pol - eh}
\]
where \( H_e \) and \( H_h \) are the Hamiltonians of electrons and holes respectively, \( H_{so} \) is the spin - orbit coupling term, \( V_{e - h} \) is the electron - hole Coulomb interaction, and \( V_{Pol - s} \) and \( V_{Pol - eh} \) are surface polarization energies.
- **Coulomb Interaction**:
\[
V_{e - h}=-\frac{e^2}{r_{eh}}
\]
- **Exchange Interaction**:
\[
H_{ex}=-\frac{2}{3} \epsilon_{ex} (a_0)^3 \delta(\mathbf{r}_e - \mathbf{r}_h) \sigma \cdot J
\]
### Conclusion
This research reveals the formation mechanisms of dark excitons and bright excitons in nitride quantum dots and their behavior with size changes, emphasizing the crucial roles of crystal - field splitting, Coulomb interaction, exchange interaction, and dielectric effect in them. These findings are helpful for further understanding the optical properties in quantum dots and provide a theoretical basis for designing new quantum - dot materials.