Abstract:The most promising quantum algorithms require quantum processors that host millions of quantum bits when targeting practical applications<a href="/articles/s41586-021-03469-4#ref-CR1">1</a>. A key challenge towards large-scale quantum computation is the interconnect complexity. In current solid-state qubit implementations, an important interconnect bottleneck appears between the quantum chip in a dilution refrigerator and the room-temperature electronics. Advanced lithography supports the fabrication of both control electronics and qubits in silicon using technology compatible with complementary metal oxide semiconductors (CMOS)<a href="/articles/s41586-021-03469-4#ref-CR2">2</a>. When the electronics are designed to operate at cryogenic temperatures, they can ultimately be integrated with the qubits on the same die or package, overcoming the 'wiring bottleneck'<a href="#ref-CR3">3</a>,<a href="#ref-CR4">4</a>,<a href="#ref-CR5">5</a>,<a href="/articles/s41586-021-03469-4#ref-CR6">6</a>. Here we report a cryogenic CMOS control chip operating at 3 kelvin, which outputs tailored microwave bursts to drive silicon quantum bits cooled to 20 millikelvin. We first benchmark the control chip and find an electrical performance consistent with qubit operations of 99.99 per cent fidelity, assuming ideal qubits. Next, we use it to coherently control actual qubits encoded in the spin of single electrons confined in silicon quantum dots<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="/articles/s41586-021-03469-4#ref-CR9">9</a> and find that the cryogenic control chip achieves the same fidelity as commercial instruments at room temperature. Furthermore, we demonstrate the capabilities of the control chip by programming a number of benchmarking protocols, as well as the Deutsch–Josza algorithm<a href="/articles/s41586-021-03469-4#ref-CR10">10</a>, on a two-qubit quantum processor. These results open up the way towards a fully integrated, scalable silicon-based quantum computer.

Analysis and 3D TCAD simulations of single-qubit control in an industrially-compatible FD-SOI device

RF simulation platform of qubit control using FDSOI technology for quantum computing

A Generalizable TCAD Framework for Silicon FinFET Spin Qubit Devices with Electrical Control

A new FDSOI spin qubit platform with 40nm effective control pitch

Silicon Spin Qubit Control and Readout Circuits in 22nm FDSOI CMOS

Engineering Si-Qubit MOSFETs: A Phase-Field Modeling Approach Integrating Quantum-Electrostatics at Cryogenic Temperatures

Monolithically Integrated Quantum Dots in a 22‐nm Fully Depleted Silicon‐on‐Insulator Process Operating at 3 K

Simulating the Quantum Rabi Model in Superconducting Qubits at Deep Strong Coupling

Electrical manipulation of a single electron spin in CMOS with micromagnet and spin-valley coupling

Cryogenic flip-chip interconnection for silicon qubit devices

Exchange control in a MOS double quantum dot made using a 300 mm wafer process

Probing single electrons across 300 mm spin qubit wafers

Exploring Intertwined Quantum and Cryogenic Behaviour in Ultra-Scaled 10nm MOSFET: A NEGF Quantum Ballistic Simulation

Spin Qubits with Scalable milli-kelvin CMOS Control

Cryogenic CMOS Design for Qubit Control: Present Status, Challenges, and Future Directions

CMOS compatibility of semiconductor spin qubits

Coupling and characterization of a Si/SiGe triple quantum dot array with a microwave resonator

Simulation Methodology for Electron Transfer in CMOS Quantum Dots

All-electrical operation of a spin qubit coupled to a high-Q resonator

Analog Quantum Simulator of a Quantum Field Theory with Fermion-Spin Systems in Silicon

CMOS-based cryogenic control of silicon quantum circuits