Abstract:We perform a full microscopic investigation on the spin relaxation in $n$-type (001) GaAs quantum wells with an ${\mathrm{Al}}_{0.4}{\mathrm{Ga}}_{0.6}\mathrm{As}$ barrier due to the D'yakonov-Perel' mechanism from nearly $20\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ to room temperature by constructing and numerically solving the kinetic spin Bloch equations. We consider all the relevant scattering such as the electron-acoustic-phonon, the electron-longitudinal-optical-phonon, the electron-nonmagnetic-impurity, and the electron-electron Coulomb scattering to the spin relaxation. The spin relaxation times calculated from our theory with a fitting spin splitting parameter are in good agreement with the experimental data by Ohno et al. [Physica E (Amsterdam) 6, 817 (2000)] over the whole temperature regime (from $20\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$). The value of the fitted spin splitting parameter agrees with many experiments and theoretical calculations. We further show the temperature dependence of the spin relaxation time under various conditions such as electron density, impurity density, and well width. We predict a peak solely due to the Coulomb scattering in the spin relaxation time at low temperature $(l50\phantom{\rule{0.3em}{0ex}}\mathrm{K})$ in samples with low electron density (e.g., density less than $1\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$) but high mobility. This peak disappears in samples with high electron density (e.g., $2\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$) and/or low mobility. The hot-electron spin kinetics at low temperature is also addressed with many features quite different from the high-temperature case predicted.

Spin relaxations in semiconductor quantum dots

Spin Relaxation in Gaas Quantum Dots

Hole spin relaxation in semiconductor quantum dots

Electron Spin Relaxation in Cubic Gan Quantum Dots: Perturbation Theory and Exact Diagonalization Study

Exciton spin relaxation in single semiconductor quantum dots

Effect of electron-electron interaction on the phonon-mediated spin relaxation in quantum dots

Spin Relaxation In Diluted Magnetic Semiconductor Quantum Dots

Parametric Properties of the Electron Spin Relaxation Due to Spin-Orbit Interaction in Inas Quantum Dots

Direct Spin–phonon Coupling of Spin-Flip Relaxation in Quantum Dots

Parametric Properties of the Electron Spin Relaxation in InAs Quantum Dots

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Spin Relaxation in Charged Quantum Dots Measured by Coherent Optical Phase Modulation Spectroscopy

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Slow Exciton Spin Relaxation in Single Self-Assembled In1-Xgaxas/Gaas Quantum Dots

Orbital and spin relaxation in single and coupled quantum dots

Spin Relaxation in N-Type Gaas Quantum Wells from A Fully Microscopic Approach

Theory of Excitons in Cubic III-V Semiconductor GaAs, InAs and GaN Quantum Dots: Fine Structure and Spin Relaxation

Control Of Spin Relaxation In Semiconductor Double Quantum Dots

Relaxation of excited spin, orbital, and valley qubit states in single electron silicon quantum dots

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