Singlet-triplet transition in a single-electron transistor at zero magnetic field

A. Kogan,G. Granger,M.A. Kastner,D. Goldhaber-Gordon,Hadas Shtrikman

DOI: https://doi.org/10.1103/PhysRevB.67.113309

2002-12-05

Abstract:We report sharp peaks in the differential conductance of a single-electron transistor (SET) at low temperature, for gate voltages at which charge fluctuations are suppressed. For odd numbers of electrons we observe the expected Kondo peak at zero bias. For even numbers of electrons we generally observe Kondo-like features corresponding to excited states. For the latter, the excitation energy often decreases with gate voltage until a new zero-bias Kondo peak results. We ascribe this behavior to a singlet-triplet transition in zero magnetic field driven by the change of shape of the potential that confines the electrons in the SET.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: the origin and behavior of the Kondo effect in the case of odd and even numbers of electrons in a single - electron transistor (SET) in zero magnetic field, especially the singlet - triplet transition phenomenon when the number of electrons is even.

Specifically, the authors observed that at low temperatures, for an odd number of electrons, when the gate voltage suppresses charge fluctuations, the expected zero - bias Kondo peak appears. For an even number of electrons, Kondo - like features related to excited states are usually observed. The energy of these excited states changes with the gate voltage, and eventually a new zero - bias Kondo peak appears. This behavior is considered to be caused by the singlet - triplet transition due to the change in the shape of the potential well that confines electrons in the SET.

To better understand this phenomenon, the authors studied the energy changes at different gate voltages through differential conductance measurements and used these data to determine the strength of the exchange interaction. They found that the energy scale of the exchange interaction is the same as the average energy level spacing, which may explain why SETs usually do not have a significant odd - even effect on their conductance peaks.

### Key points summary:
1. **Odd number of electrons**: The zero - bias Kondo peak is observed, which is due to the formation of a new many - body ground state, in which the electrons in the artificial atom are coupled with the electrons in the leads into a singlet.
2. **Even number of electrons**: Kondo - like features related to excited states are observed, and the energy of these features changes with the gate voltage, eventually leading to a singlet - triplet transition.
3. **Singlet - triplet transition**: This transition can be induced in zero magnetic field by changing the shape of the confining potential well.
4. **Experimental setup**: A SET is constructed using a two - dimensional electron gas (2DEG) in a GaAs/AlAs heterostructure, and the number of electrons and the shape of the potential well are controlled by adjusting the gate voltage.

### Formula presentation:
- The energy of the exchange interaction \( \epsilon_t = |\epsilon_2 - \epsilon_1| - \frac{J}{4} \) (when \( \epsilon_t > 0 \) it is a singlet ground state, when \( \epsilon_t < 0 \) it is a triplet ground state)
- The change of energy levels with the gate voltage \( | \epsilon_2 - \epsilon_1 | = \sqrt{(\gamma_{12} \Delta V_g + [\epsilon_0^1 - \epsilon_0^2])^2 + 4 \beta^2 \Delta V_g^2} \)

Through these studies, the authors hope to gain a deeper understanding of the Kondo effect in quantum dot systems and the physical mechanism of the singlet - triplet transition.