Abstract:A numerical renormalization-group survey of the zero-bias electrical conductance through a quantum dot embedded in the conduction path of a nanodevice is reported. The results are examined in the light of a recently derived linear mapping between the temperature-dependent conductance and the universal function describing the conductance for the symmetric Anderson model. A gate potential applied to the conduction electrons is known to change markedly the transport properties of a quantum dot side-coupled to the conduction path; in the embedded geometry here discussed, a similar potential is shown to affect only quantitatively the temperature dependence of the conductance. As expected, in the Kondo regime the numerical results are in excellent agreement with the mapped conductances. In the mixed-valence regime, the mapping describes accurately the low-temperature tail of the conductance. The mapping is shown to provide a unified view of conduction in the single-electron transistor.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the temperature - dependence of the zero - bias conductance of the quantum dot in the conduction path in a single - electron transistor (SET), and to study the linear mapping relationship between it and the universal function of the symmetric Anderson model through the numerical renormalization group (NRG) method. Specifically, the main research problems include: 1. **Temperature - dependence of zero - bias conductance**: The paper explores the conductance behavior of the embedded quantum dot at different temperatures through numerical simulation, especially in the Kondo regime and the mixed - valence regime. 2. **Linear mapping relationship**: The linear mapping relationship between the temperature - dependent zero - bias conductance and the universal function of the symmetric Anderson model is studied. This mapping relationship is described by the following formula: \[ \frac{G(T/T_K)-G_2/2}{-(G_S(T/T_K)-G_2/2)}=\cos^2(\delta - \delta_W) \] where $G(T/T_K)$ is the conductance after temperature normalization, $G_2 = 2e^2/h$ is the quantum conductance, $\delta$ is the ground - state conduction - band phase shift, and $\delta_W$ is the Fermi - level phase shift. 3. **Influence of gate voltage**: It is explored how the gate voltage applied to the conduction electrons quantitatively affects the temperature - dependent conductance. Although the gate voltage can significantly change the transmission characteristics, in the embedded geometry, it mainly affects the temperature - dependence of the conductance. 4. **Conductance behavior in the mixed - valence region**: It is studied whether the low - temperature tail of the conductance in the mixed - valence region (i.e., the partially formed quantum - dot magnetic moment) can be accurately described by the universal function. Through the study of these problems, the paper aims to provide a unified perspective to understand the charge - transfer mechanism in single - electron transistors and to verify the consistency between theoretical models and numerical results.

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