Abstract:Unprecedented control over the manufacture of electronic devices on nanometer scale has allowed to perform highly controllable and fine-tuned experiments in the quantum regime where exotic effects can nowadays be measured. In quantum dot devices, enhanced conductance below a characteristic energy scale is the signature of Kondo singlet formation. Precise predictions of quantum transport properties in similar nanoelectronics devices are desired to design optimal functionality and control. Standard transport methods suffer from limitations in nanostructure specifics, set-up design, temperature and voltage regime of applicability. To overcome these issues, such that we obtain modelling flexibility and accurate conductance predictions, in this thesis we analytically derive alternative and improved quantum transport formulations having as their starting point scattering theory in the Landauer-Büttiker formula, linear response theory in the Kubo formula, nonequilibrium Keldysh theory in the Meir-Wingreen formula and Fermi liquid theory in the Oguri formula. We perform a systematic benchmark of our exact expressions, comparing with the standard approaches using numerical renormalization group techniques. The new formulations not only reproduce literature results, but also show higher accuracy and computational efficiency, as well as a wider applicability under regimes and conditions out of reach by existing methods. We also derive generalized effective models for multi-orbital two-lead interacting nanostructures in both Coulomb blockade and mixed-valence regime, which yield reusable conductance predictions directly in terms of the effective model parameters. We conclude by applying our novel formulations to complex nanoelectronics systems, including a single-molecule benzene transistor, a charge-Kondo quantum dot made from graphene and semiconductor triple quantum dot.

Universal zero-bias conductance for the single electron transistor. II: Comparison with numerical results

Kondo-type Transport Through a Quantum Dot: a New Finite-Uslave-boson Mean-Field Approach

Electron temperature and tunnel coupling dependence of zero-bias and almost-zero-bias conductance peaks in Majorana nanowires

The Zero-Bias Anomaly Conductance Of A Strongly Correlated Dot Coupled To Luttinger Liquid Leads

Theory of Fano-Kondo effect of transport properties through quantum dots

Fano Resonance and Zero-Bias Anomaly in Parallel Double Quantum Dots Coupled to Luttinger Liquid Leads

Phonon-assisted zero bias anomaly in a single-molecule quantum dot coupled to the Luttinger liquid leads

Kondo Effect for Electron Transport Through an Artificial Quantum Dot

Anomalous Zero-Bias Conductance Peak in A Nb-Insb Nanowire-Nb Hybrid Device

Nonequilibrium steady-state thermoelectrics of Kondo-correlated quantum dots

Large Zero Bias Peaks and Dips in a Four-Terminal Thin InAs-Al Nanowire Device

Nonequilibrium Kondo Effect by the Equilibrium Numerical Renormalization Group Method: the Hybrid Anderson Model Subject to a Finite Spin Bias

Kondo Transport Through Serially Coupled Triple Quantum Dots

Kondo Temperature Evaluated from Linear Conductance in Magnetic Fields

Quantum transport in interacting nanodevices: from quantum dots to single-molecule transistors

Linear Kondo conductance in a quantum dot

Zero-bias conductance peaks at zero applied magnetic field due to stray fields from integrated micromagnets in hybrid nanowire quantum dots

Kondo-type Transport Through an Interacting Quantum Dot Coupled to Ferromagnetic Leads

Parity Independence of the Zero-Bias Conductance Peak in a Nanowire Based Topological Superconductor-Quantum Dot Hybrid Device

Modified Perturbation Theory Applied to Kondo-Type Transport through a Quantum Dot under a Magnetic Field

Conductance of Quantum Impurity Models from Quantum Monte Carlo