Local lattice potentials and steady-state vacancies in ionic crystals

Eugene V. Kholopov

DOI: https://doi.org/10.48550/arXiv.cond-mat/0208248

2002-08-13

Abstract:Basing on peculiarities of local potentials, the two principal trends in vacancy formation are revealed. The proximity to the threshold of local ionic stability due to a giant potential contribution of electronic delocalization accounts for thermal anion vacancies typical of intrinsic semiconductors of AB type. On the other hand, the tendency towards equalizing the potential field results in a high concentration of structural cation vacancies observed in Ni_3 Sb and relative compounds.

Materials Science

What problem does this paper attempt to address?

This paper attempts to solve the problem of the steady - state vacancy formation mechanism in ionic crystals. Specifically, by analyzing the contributions of the local lattice potential and electron delocalization to the electric potential, the author explains the reasons for the different concentrations of anion and cation vacancies observed in different types of ionic crystals (such as AB - type semiconductors and Ni₃Sb compounds).

### Main problems

1. **Formation of anion vacancies**:
- In AB - type semiconductors (such as GaAs), approaching the threshold of local ionic stability leads to the dominance of thermally activated anion vacancies. This phenomenon can be explained by considering the large electric potential contribution of electron delocalization.
- Equation (12) shows that at high temperatures, the concentration of anion vacancies \( n_- \) is significantly higher than the concentration of cation vacancies \( n_+ \):
\[
\frac{n_-}{n_+}=\exp\left(\frac{- 2\kappa\Phi_{\text{deloc}}^{\text{top}}}{k_BT}\right)>1
\]

2. **Formation of cation vacancies**:
- For compounds such as Ni₃Sb, the author finds that the process tending to equalize the electric potential field leads to a high concentration of structural cation vacancies. This is different from the formation mechanism of anion vacancies and cannot be simply explained by electron delocalization.
- By introducing the mixing effect of the B1 lattice potential (Equation (15)), the author shows how to explain the cation vacancy phenomenon observed in experiments by changing the local electric potential:
\[
U_0^j=(1 - c)U_0^j(D03)+cU_0^j(B1)
\]
where \( c \) describes the effective doping degree of the B1 lattice potential.

### Conclusion

By detailed analysis of the influence of the local lattice potential and electron delocalization, the author reveals two main vacancy formation trends: one is the thermally activated anion vacancy caused by electron delocalization, and the other is the high - concentration cation vacancy due to the equalization of the electric potential field. These findings are helpful for understanding the formation mechanism of complex defects and provide a theoretical basis for the design of related materials.