Spontaneous non-stoichiometry and ordering of metal vacancies in degenerate insulators

Oleksandr I. Malyi,Michael T. Yeung,Kenneth R. Poeppelmeier,Clas Persson,Alex Zunger
DOI: https://doi.org/10.48550/arXiv.1901.00183
2019-01-01
Materials Science
Abstract:We point to a class of materials representing an exception to the Daltonian view that compounds maintain integer stoichiometry at low temperatures, because forming stoichiometry-violating defects cost energy. We show that carriers in the conduction band (CB) of degenerate insulators in Ca-Al-O, Ag-Al-O, or Ba-Nb-O systems can cause a self-regulating instability, whereby cation vacancies form exothermically because a fraction of the free carriers in the CB decay into the hole states formed by such vacancies, and this negative electron-hole recombination energy offsets the positive energy associated with vacancy bond breaking. This Fermi level-induced spontaneous non-stoichiometry can lead to the formation of crystallographically ordered vacancy compounds (OVCs), explaining the previously peculiar occurrence of unusual atomic sequences such as BalNbmOn with l:m:n ratios of 1:2:6, 3:5:15, or 9:10:30. This work has general ramifications as the degenerate insulators have found growing interests in many fields ranging from transparent conductors to electrides that are electron donating promotors for catalyst.
What problem does this paper attempt to address?