2D Ferroelectricity in hetero-phase junction

Bilu Liu,Hui-Ming Cheng

DOI: https://doi.org/10.1038/s41565-022-01263-5

IF: 38.3

2022-12-13

Nature Nanotechnology

Abstract:Manipulation of vacancy and strain enables fabrication of large area, phase-controllable 2D ferroelectric materials and their hetero-phase junction.

materials science, multidisciplinary,nanoscience & nanotechnology

What problem does this paper attempt to address?

Ferroelectricity in 2D Elemental Materials

Xuanlin Zhang,Yunhao Lu,Lan Chen

DOI: https://doi.org/10.1088/0256-307X/40/6/067701

2023-01-01

Chinese Physics Letters

Abstract:Ferroelectric materials are typically made up of various elements.By introducing atomic displacements,[1]such as octahedral tilts/rotations[2,3]or interlayer sliding,[4-7]the positive and negative charge centers can be separated,re-sulting in spontaneous polarization.Due to their homo-geneity,it is difficult to achieve ferroelectricity in elemental materials where opposite charge centers must be gener-ated.However,electron degeneracy between identical ele-ments may be a crucial factor for achieving ferroelectricity in such materials.
Giant Bandgap Engineering in Two-Dimensional Ferroelectric Α-In2se3.

Jiaxiang Zhang,Xuanlin Zhang,Yu Wang,Peng Cheng,Baojie Feng,Kehui Wu,Yunhao Lu,Lan Chen

DOI: https://doi.org/10.1021/acs.jpclett.2c00618

IF: 6.888

2022-01-01

The Journal of Physical Chemistry Letters

Abstract:Bandgap engineering is an efficient strategy for controlling the physical properties of semiconductor materials. For flexible two-dimensional (2D) materials, strain provides a nondestructive and adjustable method for bandgap adjustment. Here, we propose that, in 2D materials with out-of-plane ferroelectricity, the antibonding nature of the valence band maximum and conduction band minimum and polarized charge distribution induced by ferroelectricity give rise to giant changes of the bandgap under curvature strain field. This hypothesis was proven by scanning tunneling microscopy/spectroscopy measurements on monolayer α-In2Se3 that revealed that the bandgap of α-In2Se3 increases significantly due to bending. Both experiments and theoretical calculations indicated that the bandgap increases monotonically with the degree of bending of the α-In2Se3 layer. Our work suggests that bending is an effective method for tuning the gaps of 2D ferroelectric materials, providing a new platform for bandgap engineering under the combination of ferroelectricity and strain field.
Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides

Tao Xu,Xiaoyuan Wang,Jiawei Mai,Jingtong Zhang,Jie Wang,Tong-Yi Zhang

DOI: https://doi.org/10.1002/aelm.201900932

IF: 6.2

2019-01-01

Advanced Electronic Materials

Abstract:The quest for new 2D ferroelectric materials continues to arouse interest. Based on first-principles calculations, here, 2D ferroelectric properties in lead chalcogenides PbXs (X = S, Se, and Te) with a thickness of two atomic layers via strain engineering is demonstrated. Although these materials are stable in a rocksalt-type cubic structure and are intrinsically nonferroelectric materials, an appropriate mechanical strain can readily activate a paraelectric to ferroelectric phase transition and induce in-plane electric polarization in these atomic layers. The induced polarization magnitude can be as large as 1.90 x 10(-10) C m(-1) at a biaxial strain of epsilon = 4.0%, which is comparable in magnitude to that of ultrathin ferroelectric SnTe. The Curie temperature T-c of the materials is also estimated using effective Hamiltonian simulations. The origin of the emerged ferroelectric phase is attributed to softening of the polar mode with applied strain. In addition, the band gaps of the crystals are found to be tunable with applied strain, which can be adjusted to the ideal value of 1.3 eV for photovoltaic applications. The results not only provide a new route to explore ferroelectricity in 2D materials but also suggest promising semiconducting ferroelectrics for solar applications.
Domain Structures and Phase Diagram in 2D Ferroelectrics under Applied Biaxial Strains - Phase Field Simulations and Thermodynamic Calculations

Wang Jie,Li Yulan,Chen Long-Qing,Zhang Tong-Yi

DOI: https://doi.org/10.1557/proc-881-cc6.2

2011-01-01

Abstract:Absract:The microscopic domain structures in 2D ferroelectrics under applied biaxial strains are investigated using a phase field model based on the time-dependent Ginzburg-Landau equation that takes both long-range electric and -elastic interactions into account. The stable polarization patterns are simulated at different temperatures and applied inequiaxial strains. The results show that the ferroelectrics transfer from multi-domain state to single-domain state when temperature surpasses a critical value. On the other hand, the macroscopic equilibrium polarization states are also studied through a nonlinear thermodynamic theory. The corresponding transition from a1, a2 state (p1 ≠ 0, P2 ≠ 0) to a1 state (p1 ≠0, P2 = 0) or a2 state (p2 ≠ 0, P2 = 0) is also found from the “strain-straintemperature” phase diagram, which is constructed by minimizing Helmholtz free energy.
Ferroelectric polarization tailored interfacial charge distribution to modify magnetic properties of two-dimensional Janus FeBrI/In 2 S 3 heterostructures

Rui Li,Jiawei Jiang,Wenbo Mi,Haili Bai

DOI: https://doi.org/10.1063/5.0085128

IF: 4

2022-04-18

Applied Physics Letters

Abstract:The discovery of two-dimensional magnetic and ferroelectric materials provides a feasible opportunity to realize the nonvolatile electrical control of magnetic properties in van der Waals multiferroic heterostructures. Here, based on the density of functional theory, we study the electronic structures and magnetic properties of the Janus FeBrI/In 2 S 3 multiferroic heterostructure. The Curie temperature and magnetic anisotropy energy (MAE) can be modulated by the ferroelectric polarization due to the interfacial charge redistribution. According to the orbital-resolved magnetocrystalline anisotropy energy ( E MCA ) and the second-order perturbation theory, the difference of E MCA mainly stems from the change in electronic states near the Fermi level, which is associated with interfacial charge redistribution in different ferroelectric polarization directions. These findings not only reveal the physical mechanism of the change of MAE in detail but also suggest a feasible strategy to modulate the magnetic properties.

physics, applied
Nonvolatile electric-field control of topological phase transition in the two-dimensional ferroelectric heterostructure

Xunkai Duan,Ziye Zhu,Xiaofang Chen,Zhigang Song,Jingshan Qi

DOI: https://doi.org/10.1039/d3tc04392d

IF: 6.4

2024-01-01

Journal of Materials Chemistry C

Abstract:Discovery and design of materials with the coexistence and coupling of different functional properties is extremely attractive for both fundamental physics and technical applications. In this work we proposed a...

materials science, multidisciplinary,physics, applied
Phase-controllable Large-Area Two-Dimensional in 2 Se 3 and Ferroelectric Heterophase Junction

Wei Han,Xiaodong Zheng,Ke Yang,Chi Shing Tsang,Fangyuan Zheng,Lok Wing Wong,Ka Hei Lai,Tiefeng Yang,Qi Wei,Mingjie Li,Weng Fu Io,Feng Guo,Yuan Cai,Ning Wang,Jianhua Hao,Shu Ping Lau,Chun-Sing Lee,Thuc Hue Ly,Ming Yang,Jiong Zhao

DOI: https://doi.org/10.1038/s41565-022-01257-3

IF: 38.3

2022-01-01

Nature Nanotechnology

Abstract:Memory transistors based on two-dimensional (2D) ferroelectric semiconductors are intriguing for next-generation in-memory computing. To date, several 2D ferroelectric materials have been unveiled, among which 2D In 2 Se 3 is the most promising, as all the paraelectric (β), ferroelectric (α) and antiferroelectric (β′) phases are found in 2D quintuple layers. However, the large-scale synthesis of 2D In 2 Se 3 films with the desired phase is still absent, and the stability for each phase remains obscure. Here we show the successful growth of centimetre-scale 2D β-In 2 Se 3 film by chemical vapour deposition including distinct centimetre-scale 2D β′-In 2 Se 3 film by an InSe precursor. We also demonstrate that as-grown 2D β′-In 2 Se 3 films on mica substrates can be delaminated or transferred onto flexible or uneven substrates, yielding α-In 2 Se 3 films through a complete phase transition. Thus, a full spectrum of paraelectric, ferroelectric and antiferroelectric 2D films can be readily obtained by means of the correlated polymorphism in 2D In 2 Se 3 , enabling 2D memory transistors with high electron mobility, and polarizable β′–α In 2 Se 3 heterophase junctions with improved non-volatile memory performance.
Ferroelectricity going 2D

Chuanshou Wang,Lu You,David Cobden,Junling Wang

DOI: https://doi.org/10.48550/arXiv.2206.07938

2022-06-16

Abstract:The discoveries of magnetism and ferroelectricity in 2D van der Waals (vdW) materials have brought important functionalities to the 2D materials family, and may trigger a revolution in next generation nanoelectronics and spintronics. In this perspective article, we briefly review the recent progress in the field of 2D ferroelectrics, focusing on the mechanisms that drive spontaneous polarizations in 2D systems, unique properties brought about by the reduced lattice dimensionality, and promising applications of 2D ferroelectrics. At the end, we provide an outlook for challenges that need to be addressed and our view on possible future research directions.

Materials Science
Vertical ferroelectricity in two-dimensional mixed-valence tin sulfide system: Unprecedented piezoelectricity, efficient nanogenerator and facile control of morphotoropic phase transformations

Lei Li,Menghao Wu

DOI: https://doi.org/10.1016/j.nanoen.2021.105786

IF: 17.6

2021-05-01

Nano Energy

Abstract:For the recently emerging two-dimensional van der Waals ferroelectrics, their promising prospects in nanoelectronic applications are hindered by their low vertical polarizations. Despite recent experimental breakthroughs and theoretical high throughput screening of material database, the obtained vertical polarizations of two-dimensional ferroelectrics are still limited. Here we propose a strategy of constructing two-dimensional mixed-valence compounds. We show first-principles evidence that Sn2S3 monolayer can be synthesized via epitaxial growth of SnS on SnS2 monolayer with degenerate mixed-valence bi-states. Such a system possesses a room-temperature robust vertical polarization higher than 10 pC/m, which can be switched via interchange of oxidation states between two layers crossing an energy-saving low barrier, either by applying an electric field or mechanical bending. If such Sn2S3 monolayer is utilized as a nanogenerator, an unprecedented alternating voltage of ~130 V can be generated by applying an oscillating driving force that repeatedly reverses its polarization. Moreover, it possesses multiple metastable phases with distinct electronic properties. The transformations between them are not only strain-tunable, but can also be controlled via external electric field or low frequency linearly polarized light. Due to the small energy difference between polar and nonpolar states with distinct thicknesses, akin to morphotoropic phases, an unprecedented ultra-high piezoelectric coefficient (>2700 pm/V) can be obtained in the phase transformation under pressure, which can be further greatly enhanced via critical doping.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Extendable piezo/ferroelectricity in nonstoichiometric 2D transition metal dichalcogenides

Yi Hu,Lukas Rogée,Weizhen Wang,Lyuchao Zhuang,Fangyi Shi,Hui Dong,Songhua Cai,Beng Kang Tay,Shu Ping Lau

DOI: https://doi.org/10.1038/s41467-023-44298-5

IF: 16.6

2023-12-20

Nature Communications

Abstract:Engineering piezo/ferroelectricity in two-dimensional materials holds significant implications for advancing the manufacture of state-of-the-art multifunctional materials. The inborn nonstoichiometric propensity of two-dimensional transition metal dichalcogenides provides a spiffy ready-available solution for breaking inversion centrosymmetry, thereby conducing to circumvent size effect challenges in conventional perovskite oxide ferroelectrics. Here, we show the extendable and ubiquitous piezo/ferroelectricity within nonstoichiometric two-dimensional transition metal dichalcogenides that are predominantly centrosymmetric during standard stoichiometric cases. The emerged piezo/ferroelectric traits are aroused from the sliding of van der Waals layers and displacement of interlayer metal atoms triggered by the Frankel defects of heterogeneous interlayer native metal atom intercalation. We demonstrate two-dimensional chromium selenides nanogenerator and iron tellurides ferroelectric multilevel memristors as two representative applications. This innovative approach to engineering piezo/ferroelectricity in ultrathin transition metal dichalcogenides may provide a potential avenue to consolidate piezo/ferroelectricity with featured two-dimensional materials to fabricate multifunctional materials and distinguished multiferroic.

multidisciplinary sciences
Piezoelectric Manipulation and Engineering for Layertronics in Two-Dimensional Materials

Jianke Tian,Jia Li,Hengbo Liu,Yan Li,Ze Liu,Linyang Li,Jun Li,Guodong Liu,Junjie Shi

2024-10-21

Abstract:The electronic transport characteristics of two-dimensional (2D) systems have widespread application prospects in the fabrication of multifunctional nanodevices. However, the current research for basic transport phenomena, such as anomalous valley Hall effect (AVHE) and piezoelectric response, is limited to discrete discussion. Here, we theoretically propose a valley-piezoelectricity coupling strategy beyond the existing paradigm to realize AVHE and layer Hall effect (LHE) in ferrovalley (FV) systems, and its essential principle can be extended to general valleytronic materials. Through first-principles calculations, we demonstrate that the large polarized electric field of 2.8*106 (1.67*107) V/m can be induced by 0.1% uniaxial strain in FV 2H-LaHF (1T-LaHF) monolayers. In addition, the microscopic mechanism of interlayer antiferromagnetic (AFM) state of 2H-LaHF bilayer is uncovered by the spin Hamiltonian and super-superexchange (SSE) interaction. Our findings pave the way for new explorations of valley Hall-related effect involving piezoelectricity.

Mesoscale and Nanoscale Physics,Materials Science,Applied Physics
Two-Dimensional Ferroelectric C2N/In2Se3 Heterobilayer with Tunable Electronic Property and Photovoltaic Effect

Xiaolin Cai,Guoxing Chen,Rui Li,Yu Jia

DOI: https://doi.org/10.1021/acs.langmuir.3c02297

IF: 3.9

2023-10-17

Langmuir

Abstract:Two-dimensional ferroelectric monolayer materials with reversible spontaneous polarization provide more regulatory dimensions for their relevant van der Waals heterostructures. Using first-principles calculations, we construct the C2N/In2Se3 bilayer heterostructure and study its physical properties as well as the effects of E-field and strain. The results indicate that the intrinsic polarization of the component In2Se3 monoalyer can significantly adjust the electronic properties of the C2N/In2Se3 heterobilayer. When the polarization of the In2Se3 monolayer points to the interface (up-In2Se3), the C2N/In2Se3 bilayer behaves as the type-I indirect band gap heterostructure, while it transforms to the type-II direct band gap heterostructure after reversing the polarization of the In2Se3 monolayer (dp-In2Se3). Furthermore, the two C2N/In2Se3 heterostructures both have enhanced optical absorption in the visible region than the isolated In2Se3 and C2N monolayers. More importantly, the external electric field and strain can easily regulate the electronic properties of the C2N/In2Se3 heterostructures. The power conversion efficiency (PCE) of the type-II C2N/dp-In2Se3 heterostructure is 8.16%, and the electric field of 0.1 V/Å and the strain of -2% can transform the C2N/up-In2Se3 heterostructure into type-II one, conducive to the high PCE up to 24.03 and 24%, respectively. Our proposed C2N/In2Se3 heterostructure is promising in future luminescent and photovoltaic fields, and our findings also provide a strategy for functionalizing 2D monolayer materials by the intrinsic polarization property of ferroelectric materials.
Progress and challenges in the synthesis of two-dimensional Van der Waals ferroic materials and heterostructures

Jia Wang,Junzhe Kang,Stasiu Chyczewski,Ye Lin,Hanwool Lee,Wenjuan Zhu,Xia Hong

DOI: https://doi.org/10.1088/1361-6463/ad865f

2024-10-16

Journal of Physics D Applied Physics

Abstract:Two-dimensional ferroelectric and magnetic van der Waals materials are emergent platforms for the discovery of novel cooperative quantum phenomena and development of energy-efficient logic and memory applications as well as neuromorphic and topological computing. This review presents a comprehensive survey of the rapidly growing 2D ferroic family from the synthesis perspective, including brief introductions to the top-down and bottom-up approaches for fabricating 2D ferroic flakes, thin films, and heterostructures as well as the important characterization techniques for assessing the sample properties. We also discuss the key challenges and future directions of the field, including scalable growth, property control, sample stability, and integration with other functional materials.

physics, applied
Anomalous Electronic Anisotropy Triggered by Ferroelastic Coupling in Multiferroic Heterostructures.

Changcheng Ju,Jan-Chi Yang,Cheng Luo,Padraic Shafer,Heng-Jui Liu,Yen-Lin Huang,Ho-Hung Kuo,Fei Xue,Chih-Wei Luo,Qing He,Pu Yu,Elke Arenholz,Long-Qing Chen,Jinsong Zhu,Xiaomei Lu,Ying-Hao Chu

DOI: https://doi.org/10.1002/adma.201502743

IF: 29.4

2015-01-01

Advanced Materials

Abstract:The ferroelastic strain coupling in multiferroic heterostructures is explored aiming at novel physical effects and fascinating functionality. Ferroelastic domain walls in manganites induced by a stripe BiFeO3 template can modulate the electronic transfer and sufficiently block the magnetic ordering, creating a vast anisotropy. The findings suggest the great importance of ferroelastic strain engineering in material modifications.
Two-dimensional antiferroelectric tunnel junction

Jun Ding,Ding-Fu Shao,Ming Li,Li-Wei Wen,Evgeny Y. Tsymbal

DOI: https://doi.org/10.1103/PhysRevLett.126.057601

2021-01-09

Abstract:Ferroelectric tunnel junctions (FTJs), which consist of two metal electrodes separated by a thin ferroelectric barrier, have recently aroused significant interest for technological applications as nanoscale resistive switching devices. So far, most of existing FTJs have been based on perovskite-oxide barrier layers. The recent discovery of the two-dimensional (2D) van der Waals ferroelectric materials opens a new route to realize tunnel junctions with new functionalities and nm-scale dimensions. Due to the weak coupling between the atomic layers in these materials, the relative dipole alignment between them can be controlled by applied voltage. This allows transitions between ferroelectric and antiferroelectric orderings, resulting in significant changes of the electronic structure. Here, we propose to realize 2D antiferroelectric tunnel junctions (AFTJs), which exploit this new functionality, based on bilayer In$_2$X$_3$ (X = S, Se, Te) barriers and different 2D electrodes. Using first-principles density functional theory calculations, we demonstrate that the In$_2$X$_3$ bilayers exhibit stable ferroelectric and antiferroelectric states separated by sizable energy barriers, thus supporting a non-volatile switching between these states. Using quantum-mechanical modeling of the electronic transport, we explore in-plane and out-of-plane tunneling across the In$_2$S$_3$ van der Waals bilayers, and predict giant tunneling electroresistance (TER) effects and multiple non-volatile resistance states driven by ferroelectric-antiferroelectric order transitions. Our proposal opens a new route to realize nanoscale memory devices with ultrahigh storage density using 2D AFTJs.

Materials Science
Coexistence of ferroelectricity and antiferroelectricity in 2D van der Waals multiferroic

Yangliu Wu,Zhaozhuo Zeng,Haipeng Lu,Xiaocang Han,Chendi Yang,Nanshu Liu,Xiaoxu Zhao,Liang Qiao,Wei Ji,Renchao Che,Longjiang Deng,Peng Yan,Bo Peng

DOI: https://doi.org/10.1038/s41467-024-53019-5

IF: 16.6

2024-10-04

Nature Communications

Abstract:Abstract Multiferroic materials have been intensively pursued to achieve the mutual control of electric and magnetic properties. The breakthrough progress in 2D magnets and ferroelectrics encourages the exploration of low-dimensional multiferroics, which holds the promise of understanding inscrutable magnetoelectric coupling and inventing advanced spintronic devices. However, confirming ferroelectricity with optical techniques is challenging in 2D materials, particularly in conjunction with antiferromagnetic orders in single- and few-layer multiferroics. Here, we report the discovery of 2D vdW multiferroic with out-of-plane ferroelectric polarization in trilayer NiI 2 device, as revealed by scanning reflective magnetic circular dichroism microscopy and ferroelectric hysteresis loops. The evolution between ferroelectric and antiferroelectric phases has been unambiguously observed. Moreover, the magnetoelectric interaction is directly probed by magnetic control of the multiferroic domain switching. This work opens up opportunities for exploring multiferroic orders and multiferroic physics at the limit of single or few atomic layers, and for creating advanced magnetoelectronic devices.

multidisciplinary sciences
Ferrielectricity controlled widely-tunable magnetoelectric coupling in van der Waals multiferroics

Qifeng Hu,Yuqiang Huang,Yang Wang,Sujuan Ding,Minjie Zhang,Chenqiang Hua,Linjun Li,Xiangfan Xu,Jinbo Yang,Shengjun Yuan,Kenji Watanabe,Takashi Taniguchi,Yunhao Lu,Chuanhong Jin,Dawei Wang,Yi Zheng

DOI: https://doi.org/10.1038/s41467-024-47373-7

IF: 16.6

2024-04-08

Nature Communications

Abstract:Abstract The discovery of various primary ferroic phases in atomically-thin van der Waals crystals have created a new two-dimensional wonderland for exploring and manipulating exotic quantum phases. It may also bring technical breakthroughs in device applications, as evident by prototypical functionalities of giant tunneling magnetoresistance, gate-tunable ferromagnetism and non-volatile ferroelectric memory etc. However, two-dimensional multiferroics with effective magnetoelectric coupling, which ultimately decides the future of multiferroic-based information technology, has not been realized yet. Here, we show that an unconventional magnetoelectric coupling mechanism interlocked with heterogeneous ferrielectric transitions emerges at the two-dimensional limit in van der Waals multiferroic CuCrP 2 S 6 with inherent antiferromagnetism and antiferroelectricity. Distinct from the homogeneous antiferroelectric bulk, thin-layer CuCrP 2 S 6 under external electric field makes layer-dependent heterogeneous ferrielectric transitions, minimizing the depolarization effect introduced by the rearrangements of Cu + ions within the ferromagnetic van der Waals cages of CrS 6 and P 2 S 6 octahedrons. The resulting ferrielectric phases are characterized by substantially reduced interlayer magnetic coupling energy of nearly 50% with a moderate electric field of 0.3 V nm −1 , producing widely-tunable magnetoelectric coupling which can be further engineered by asymmetrical electrode work functions.

multidisciplinary sciences
Magnetic and Ferroelectric Manipulation of Valley Physics in Janus Piezoelectric Materials

Yun-Qin Li,Xian Zhang,Xiao Shang,Qi-Wen He,Dai-Song Tang,Xiao-Chun Wang,Chun-Gang Duan

DOI: https://doi.org/10.1021/acs.nanolett.3c03238

IF: 10.8

2023-10-20

Nano Letters

Abstract:The realization of multiferroic materials offers the possibility of multifunctional electronic device design. However, the coupling between the multiferroicity and piezoelectricity in Janus materials is rarely reported. In this study, we propose a mechanism for manipulating valley physics by magnetization reversing and ferroelectric switching in multiferroic and piezoelectric material. The ferromagnetic VSiGeP(4) monolayer exhibits a large valley polarization up to 100 meV, which can be...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Strain-Engineered Ferroelectricity in 2H Bilayer MoS 2

Jianfeng Mao,Jingyu He,Weng Fu Io,Feng Guo,Zehan Wu,Ming Yang,Jianhua Hao

DOI: https://doi.org/10.1021/acsnano.4c07397

IF: 17.1

2024-10-25

ACS Nano

Abstract:The exploration of two-dimensional (2D) materials exhibiting out-of-plane ferroelectric and piezoelectric properties through interlayer twist/translation or strain, known as sliding ferroelectricity, has become a focal point in the quest for low-power electronic devices, capitalizing on weak van der Waals interactions. Herein, we delve into the behavior of strained bilayer molybdenum disulfide (2L-MoS(2)) transferred onto a nanocone-patterned substrate. An intriguing observation is the emergence...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology

2D Ferroelectricity in hetero-phase junction

Ferroelectricity in 2D Elemental Materials

Giant Bandgap Engineering in Two-Dimensional Ferroelectric Α-In2se3.

Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides

Domain Structures and Phase Diagram in 2D Ferroelectrics under Applied Biaxial Strains - Phase Field Simulations and Thermodynamic Calculations

Ferroelectric polarization tailored interfacial charge distribution to modify magnetic properties of two-dimensional Janus FeBrI/In 2 S 3 heterostructures

Nonvolatile electric-field control of topological phase transition in the two-dimensional ferroelectric heterostructure

Phase-controllable Large-Area Two-Dimensional in 2 Se 3 and Ferroelectric Heterophase Junction

Ferroelectricity going 2D

Vertical ferroelectricity in two-dimensional mixed-valence tin sulfide system: Unprecedented piezoelectricity, efficient nanogenerator and facile control of morphotoropic phase transformations

Extendable piezo/ferroelectricity in nonstoichiometric 2D transition metal dichalcogenides

Piezoelectric Manipulation and Engineering for Layertronics in Two-Dimensional Materials

Two-Dimensional Ferroelectric C2N/In2Se3 Heterobilayer with Tunable Electronic Property and Photovoltaic Effect

Progress and challenges in the synthesis of two-dimensional Van der Waals ferroic materials and heterostructures

Anomalous Electronic Anisotropy Triggered by Ferroelastic Coupling in Multiferroic Heterostructures.

Two-dimensional antiferroelectric tunnel junction

Coexistence of ferroelectricity and antiferroelectricity in 2D van der Waals multiferroic

Ferrielectricity controlled widely-tunable magnetoelectric coupling in van der Waals multiferroics

Magnetic and Ferroelectric Manipulation of Valley Physics in Janus Piezoelectric Materials

Strain-Engineered Ferroelectricity in 2H Bilayer MoS 2