Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities

Shengli Zhang,Meiqiu Xie,Fengyu Li,Zhong Yan,Yafei Li,Erjun Kan,Wei Liu,Zhongfang Chen,Haibo Zeng
DOI: https://doi.org/10.1002/ange.201507568
2015-12-16
Angewandte Chemie
Abstract:Optoelectronic applications require materials both responsive to objective photons and able to transfer carriers, so new two‐dimensional (2D) semiconductors with appropriate band gaps and high mobilities are highly desired. A broad range of band gaps and high mobilities of a 2D semiconductor family, composed of monolayer of Group 15 elements (phosphorene, arsenene, antimonene, bismuthene) is presented. The calculated binding energies and phonon band dispersions of 2D Group 15 allotropes exhibit thermodynamic stability. The energy band gaps of 2D semiconducting Group 15 monolayers cover a wide range from 0.36 to 2.62 eV, which are crucial for broadband photoresponse. Significantly, phosphorene, arsenene, and bismuthene possess carrier mobilities as high as several thousand cm2 V−1 s−1. Combining such broad band gaps and superior carrier mobilities, 2D Group 15 monolayers are promising candidates for nanoelectronics and optoelectronics. Eine Familie schichtförmiger Halbleiter – Phosphoren, Arsenen, Antimonen und Bismuthen – zeichnet sich durch einen variablen Bereich von Bandlücken und hohe Ladungsträgermobilitäten aus. Die verschiedenartigen Bandlücken sind wichtig für photoresponsives Verhalten, und die faltige Struktur des Phosphorens, Arsenens und Bismuthens führt zu Mobilitäten von mehreren tausend cm2 V−1 s−1.
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