Abstract:In this work, a CdTe/Ge/Si photodetector was fabricated using two different methods. The thermal evaporation method was used to prepare Ge on n-type silicon substrates, and then the CdTe layer was prepared using the pulsed laser method with different numbers of pulses (300, 400, and 500). The structural and optical properties of Ge and CdTe films were studied. XRD studies reveal that the CdTe and Ge films deposited on silicon are polycrystalline in nature. FE-SEM images indicated that when the number of pulses was increased, the particles took on a spherical shape with a decrease in particle size of about 40 nm. The optical energy band gap of the CdTe film at different pulse numbers shows band gap values of 2.4 eV, 2.35 eV, and 2.11 eV at pulse numbers of 300, 400, and 500, respectively. Two response peaks are observed at 405 and 530 nm, where the first peak is attributed to the absorption edge of the Ge film and the second to the CdTe film. We note that the spectral response values of the photodiodes at the wavelength of 405 nm are 11.501 μA/mW, 17.802 μA/mW, and 23.765 μA/mW, which belong to the Ge film, while for the wavelength of 530 nm, which belongs to the cadmium film, the spectral responses were 11.934 μA/mW, 17.750 μA/mW, and 24.205 μA/mW, respectively. The photo-detectivity values were 1.86 × 10 17 Jones, 3.44 × 10 17 Jones, and 4.00 × 10 17 Jones at the wavelength of 405 nm, while at the wavelength of 530 nm, they were 1.93 × 10 17 Jones, 3.43 × 10 17 Jones, and 4.07 × 10 17 Jones, respectively. The external quantum efficiency values are 35.212%, 54.504%, and 72.761% for 405 nm; with values of 27.921%, 41.529%, and 56.629%, respectively, at a wavelength of 530 nm. The fast response times of these photodiodes are 0.30 ms for rising and 0.32 ms microseconds for falling. This innovation paves the way for producing high-performance instruments at reasonable costs.

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