Electron g-factor Engineering in III-V Semiconductors for Quantum Communications

Hideo Kosaka,Andrey A. Kiselev,Filipp A. Baron,Ki Wook Kim,Eli Yablonovitch

DOI: https://doi.org/10.48550/arXiv.quant-ph/0102056

2001-02-23

Abstract:An entanglement-preserving photo-detector converts photon polarization to electron spin. Up and down spin must respond equally to oppositely polarized photons, creating a requirement for degenerate spin energies, ge=0 for electrons. We present a plot of ge-factor versus lattice constant, analogous to bandgap versus lattice constant, that can be used for g-factor engineering of III-V alloys and quantum wells

Quantum Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to design a photodetector capable of maintaining quantum entanglement, which can convert the polarization state of photons into the electron spin state. To achieve this goal, it is necessary to ensure that the up - spin and down - spin electrons respond the same to photons of opposite polarizations, which means that the electron spin energy is required to be degenerate, that is, the electron \( g \)-factor is close to zero (\( g_e\approx0 \)).

Specifically, the main problems in the paper include:

1. **Realizing electron \( g \)-factor engineering**: In order for the photodetector to maintain the transmission of quantum information, the \( g \)-factor of electrons must be made close to zero through material design. This involves selecting appropriate III - V semiconductor materials or alloys and using their lattice constants and other physical properties for regulation.

2. **Meeting the requirements of quantum communication**: Actual quantum communication systems need to be able to transmit quantum information through photon polarization in optical fibers and convert it into the electron spin state in semiconductors. In order to maintain quantum entanglement, the photodetector should be able to equivalently absorb the up - spin and down - spin electron states, which requires \( g_e\approx0 \).

3. **Controlling the spin coherence time**: In addition to the requirements for the \( g \)-factor, it is also necessary to ensure a long spin coherence time and an appropriate hole \( g \)-factor (\( |g_h|\gg0 \)) to lift the Kramers degeneracy of the valence band.

4. **Material selection and design**: The paper explores the variation trend of the electron \( g \)-factor of different III - V semiconductor materials (such as GaAs, InP, etc.) and their alloys with the lattice constant, and proposes a method to achieve the required \( g \)-factor combination through band - gap engineering. Especially for the InP substrate, the author shows how to adjust the lattice constant to match the conventional InP substrate.

To achieve the above goals, the author plotted the relationship between the experimentally measured electron \( g \)-factor of III - V semiconductor materials and the lattice constant, and analyzed it in combination with theoretical formulas. These studies are helpful for guiding the future design of new - type photodetectors in the field of quantum communication.