Abstract:The growth characteristics of Ta2O5 thin films by atomic layer deposition (ALD) were examined using Ta(NtBu)(NEt2)3 (TBTDET) and Ta(NtBu)(NEt2)2Cp (TBDETCp) as Ta-precursors, where tBu, Et, and Cp represent tert-butyl, ethyl, and cyclopentadienyl groups, respectively, along with water vapor as oxygen source. The grown Ta2O5 films were amorphous with very smooth surface morphology for both the Ta-precursors. The saturated ALD growth rates of Ta2O5 films were 0.77 Å cycle-1 at 250 °C and 0.67 Å cycle-1 at 300 °C using TBTDET and TBDETCp precursors, respectively. The thermal decomposition of the amido ligand (NEt2) limited the ALD process temperature below 275 °C for TBTDET precursor. However, the ALD temperature window could be extended up to 325 °C due to a strong Ta-Cp bond for the TBDETCp precursor. Because of the improved thermal stability of TBDETCp precursor, excellent nonuniformity of ∼2% in 200 mm wafer could be achieved with a step coverage of ∼90% in a deep hole structure (aspect ratio 5:1) which is promising for 3-dimensional architecture to form high density memories. Nonetheless, a rather high concentration (∼7 at. %) of carbon impurities was incorporated into the Ta2O5 film using TBDETCp, which was possibly due to readsorption of dissociated ligands as small organic molecules in the growth of Ta2O5 film by ALD. Despite the presence of high carbon concentration which might be an origin of large leakage current under electric fields, the Ta2O5 film using TBDETCp showed a promising resistive switching performance with an endurance cycle as high as ∼17 500 for resistance switching random access memory application. The optical refractive index of the deposited Ta2O5 films was 2.1-2.2 at 632.8 nm using both the Ta-precursors, and indirect optical band gap was estimated to be ∼4.1 eV for both the cases.

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ALD TaN Barrier for Enhanced Performance with Low Contact Resistance for 14nm Technology Node Cu Interconnects

The physical properties of cubic plasma-enhanced atomic layer deposition TaN films

Deposition of TiN and TaN by Remote Plasma ALD for Cu and Li Diffusion Barrier Applications

Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier

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Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NtBu)(NEt2)3, Ta(NtBu)(NEt2)2Cp, and H2O

Barrier Metal Properties of Amorphous Tantalum Nitride Thin Films between Platinum and Silicon deposited using Remote Plasma Metal Organic Chemical Vapor Method

Effects of Tantalum Alloying on Surface Morphology and Deuterium Retention in Tungsten Exposed to Deuterium Plasma

Design and Fabrication of Ultrathin and Highly Thermal-Stable Α-Ta/graded Ta(N)/TaN Multilayer As Diffusion Barrier for Cu Interconnects

TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition

Discrete Study of ALD TaN on Via and Line for Low Resistive and High Reliable Cu/Low-k Interconnects and Other Applications

Diffusion Barrier Properties of TaNx Films Prepared by Plasma Enhanced Atomic Layer Deposition from PDMAT with N2 or NH3 Plasma

Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature

Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma

Integration of ALD-TaN Liners on Nanoporous Dielectrics

Characteristics of Plasma-Treated Amorphous Ta-Si-C Film As a Diffusion Barrier for Copper Metallization

Developments of TaN ALD Process for 3D Conformal Coatings

Surface Acidity-Induced Inherently Selective Atomic Layer Deposition of Tantalum Oxide on Dielectrics

Electroless Deposition of Pure Co on TaN Substrate for Interconnect Metallization

Electroplating Cu on ALD $\text{tin}$ for Small Size TSV