High-Concentration Niobium-Substituted WS2 Basal Domains with Reconfigured Electronics Band Structure for Hydrogen Evolution Reaction.

M. Pam,Junping Hu,Y. Ang,Shaozhuan Huang,Dezhi Kong,Yumeng Shi,Xiaoxu Zhao,Dechao Geng,S. Pennycook,L. Ang,H. Yang
DOI: https://doi.org/10.1021/acsami.9b08232
2019-08-21
Abstract:The control of intrinsic activity and electronic properties of two-dimensional (2D) semiconductors via substitutional doping represents a promising engineering technique for electronics, optoelectronics and electrocatalysis applications. However, in-situ substitutional transition-metal doping strategy for industrial-grade 2D semiconductor technology remains a formidable challenge. Here we report the synthesis of highly uniform p-doped niobium substituted tungsten disulfides (Nb-WS2) monolayer, with a doping concentration of nearly 7 % and a domain size larger than 100 μm, through a face-to-face metal dopant precursor in salt-catalyzed CVD process. Our results reveal unusual effects in the structural, optical, electronic and electrocatalysis characteristics of Nb-WS2 monolayer. The Nb substitution at the tungsten site readily induces band restructuring, which converts the naturally semiconducting properties to semi-metallic properties as confirmed by first-principle density functional (DFT) simulation and electrical measurement. Due to the enhanced metallic characteristics, Nb-WS2 monolayer exhibits significantly improved hydrogen evolution activity, as compared to the pristine WS2. Our findings shed new light on the CVD growth and the emergence of unusual physics and chemistry in Nb-WS2 crystals, thus opening up new opportunities in the design of 2D-material-based electronics and catalysts of novel functionalities.
Medicine
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