A parallel adaptive finite volume method for nanoscale double gates mosfets simulation

Yiming Li,Shao-Ming Yu,Pu Chen
DOI: https://doi.org/10.1142/9789812704658_0084
2003-09-12
Abstract:We propose a quantum correction transport model and apply a parallel adaptive refinement methodology to nanoscale semiconductor device simulation on a Linux cluster with MPI libraries. In the nano device simulation the quantum mechanical effect plays an important role. To model this effect a quantum correction Poisson equation is derived and replaced the classical one in the transport models. Our numerical method is mainly based on the adaptive finite volume method with a posteriori error estimation, constructive monotone iterative method, and domain decomposition algorithm. A 20 nm double-gate MOSFET is simulated with the developed simulator.
Computer Science
What problem does this paper attempt to address?