Abstract:AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) are widely used in sterilization, sensing, water purification, medical treatment, non-line of sight (NLOS) communication and many other fields. Especially it has been reported that the global novel coronavirus (COVID-19) can be effectively inactivated by the DUV light with a wavelength below 280 nm (UVC) within a few seconds, which has also attracted great attention. However, the external quantum efficiency (EQE) of UVC LED is still at a low level, generally not more than 10%. As an important component of EQE, internal quantum efficiency (IQE) plays a crucial role in realizing high-performance DUV-LED. In order to improve the IQE of AlGaN-based DUV-LED, this work adopts an electron blocking layer (EBL) structure based on InAlGaN/AlGaN superlattice. The results show that the superlattice EBL structure can effectively improve the IQE compared with the traditional single-layer and double-layer EBL structure for the DUV-LED. On this basis, the optimization method based on JAYA intelligent algorithm for LED structure design is proposed in this work. Using the proposed design method, the InAlGaN/AlGaN superlattice EBL structure is further optimized to maximize the LED’s IQE. It is demonstrated that the optimized superlattice EBL structure is beneficial to not only the suppression of electron leakage but also the improvement of hole injection, leading to the increase of carrier recombination in the active region. As a result, the IQE of the DUV-LED at 200 mA injection current is 41.2% higher than that of the single-layer EBL structure. In addition, the optimized structure reduces IQE at high current from 25% to 4%. The optimization method based on intelligent algorithm can break through the limitation of the current LED structure design and provide a new method to improve the efficiency of AlGaN-based DUV-LED.

Design of Asymmetric Quantum Barrier for Deep-Ultraviolet Light-Emitting Diode With High Crystal Quality

Investigation of Quantum Structure in N-polar Deep-Ultraviolet Light-Emitting Diodes

Performance Improvement of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Step-Like Quantum Barriers

Advantages of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes with an Al-composition Graded Quantum Barrier.

Efficiency Droop Suppression and Light Output Power Enhancement of Deep Ultraviolet Light-Emitting Diode by Incorporating Inverted-V-Shaped Quantum Barriers

Effect of V-defects on the Performance Deterioration of InGaN/GaN Multiple-Quantum-well Light-Emitting Diodes with Varying Barrier Layer Thickness

Impact of Composite Last Quantum Barrier on the Performance of AlGaN-based Deep Ultraviolet Light-Emitting Diode

Polarization-engineered AlGaN Last Quantum Barrier for Efficient Deep-Ultraviolet Light-Emitting Diodes

Performance Improvement of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes Via Si-doping Design of Quantum Barriers

Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure

Advantages of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Graded Quantum Structures in the Active Region

Suppression of Efficiency Droop by Inserting a Thin Undoped AlGaN Layer into Each Quantum Barrier in AlGaN-Based Deep-Ultraviolet Light-Emitting Diode

Last-Quantum-Barrier-Free AlGaN Deep Ultraviolet LEDs With Boosted Efficiency

Improved Wave Function Overlap and Carrier Confinement of AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with Graded Composition Multiple Quantum Wells

Interfacial polarization charge engineering with co-designed LQB and EBL for enhanced EQE of AlGaN DUV LEDs

Enhancing external quantum efficiency of deep ultraviolet micro-LEDs through geometry design and multi-physics field coupling analysis

Numerical Modeling for 250 nm DUV LEDs With Discrete p-type Functional Layers to Manage Both Carrier and Photon Transport

Performance Improvement of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes by Inserting Single Spike Barriers

Intelligent Optimization Design of Electron Barrier Layer for AlGaN-based Deep-Ultraviolet Light-Emitting Diodes

AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer

High-performance electron-blocking-layer-free deep ultraviolet light-emitting diodes implementing a strip-in-a-barrier structure