Temperature and Environmental Stable Titanium Carbide as Electron-Selective Heterocontact for Crystalline Silicon Solar Cells
Yang Ding,Zhiping Huang,Deyuan Wei,Jingwei Chen,Biao Sun,Chong Di,Jianming Wang,Kangping Zhang,Ying Xu,Guangsheng Fu
DOI: https://doi.org/10.1039/d3tc01388j
IF: 6.4
2023-06-30
Journal of Materials Chemistry C
Abstract:Carrier selective transport material has been extensively investigated as an important means of increasing carrier collection rates. In this study, magnetron RF sputtered titanium carbide (TiC x ) is proposed as a novel electron-selective contact material that provides excellent electron transport and hole blocking properties on n-type Si surfaces due to small conduction band shift and large valence band shift. The prepared ~4 nm TiC x /n-Si heterostructure contact achieves a contact resistivity of 4.24 mΩ·cm 2 , which is lower than most reported structures. Crystalline silicon solar cells with a simple full-area electron-selective TiC x rear contact achieves a power conversion efficiency (PCE) of 17.37%, which is attributed to a significant increase in fill factor (FF) and open-circuit voltage (Voc). At the same time, the TiC x films demonstrate good environmental and temperature stability in damp heat tests, light soaking tests, HAST tests and high temperature annealing tests up to 770 °C. This work opens up the possibility of using metal carbides as an electron transport layer for photovoltaic devices and validates their suitability for existing large-scale production processes for high-efficiency silicon solar cells.
materials science, multidisciplinary,physics, applied