Abstract:Defect ordered and low dimensional Cs 3 Bi 2 I 9 planar perovskites have garnered enormous significance in photovoltaic applications due to their remarkable stability against oxygen, heat, and moisture. Despite these advantages, the power conversion efficiencies of Cs 3 Bi 2 I 9 -based planar perovskites remain relatively low. This is primarily attributed to their wide band gap of approximately 2 eV and losses due to interfacial charge recombination. To resolve this issue, this article proposes a novel design of Cs 3 Bi 2 I 9 –La 2 NiMnO 6 based dual absorber composition to form a ITO/ETL/Cs 3 Bi 2 I 9 /La 2 NiMnO 6 (LNMO)/HTL multi-heterojunction perovskite solar cell (PSC) architecture. Incorporating La 2 NiMnO 6 oxide material as secondary multifunctional double perovskite absorber layer (DPAL), which possesses a lower band gap of 1.05 eV, as a secondary absorber layer enhances efficient charge separation. This material functions as a hole transport conductor, facilitating the creation of a cascade band-matched hole extraction system with the Cu 2 ZnSnS 4 (CFTS) hole transport material (HTM). Optimized optical response along with precisely aligned energy levels of the proposed Cs 3 Bi 2 I 9 –La 2 NiMnO 6 (LNMO) absorber composition greatly attributes in enhanced optical absorption with reduced recombination losses. The critical device parameters of the proposed PSC architecture have been intensively optimized through SCAPS-1D simulator to attain a substantially affordable power conversion efficiency (PCE) of 26.02%%, short circuit current ( J sc ) of 42.7 mA/cm 2 , open circuit voltage ( V oc ) of 0.863 V, and fill factor ( FF ) of 75.01% device defect density of 10 15 cm −3 under AM 1.5 photo illumination. Notably, the utilization of a dual-absorber structure comprising Cs 3 Bi 2 I 9 and La 2 NiMnO 6 materials proves to be significantly more efficient in terms of quantum efficiency and wide spectral coverage at optimal values compared to using either material alone as single absorbers. The proposed model achieves a peak efficiency of approximately 90.22% over a spectral range of 300–1200 nm, surpassing the efficiency of 80% attained with a single Cs 3 Bi 2 I 9 absorber covering a spectral range of 300–980 nm. Additionally, it outperforms the efficiency of 83% achieved by the single La 2 NiMnO 6 (LNMO) absorber within the spectral range of 300–1200 nm.

Role of La2CuO4 as Buffer Layer for a Significant Improvement of the Performance of TiO2/Cu2O Based All‐Oxide Solar Cell: A SCAPS‐1D Numerical Analysis

The Investigation of the Influence of a Cu2O Buffer Layer on Hole Transport Layers in MAPbI3-Based Perovskite Solar Cells

Improvement of photovoltaic response in perovskite solar cell via all inorganic lead free cubic double La2NiMnO6/Cs3Bi2I9 based graded absorber architecture

Role of absorber and buffer layer thickness on Cu2O/TiO2 heterojunction solar cells

Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency

Efficient and stable perovskite solar cell through the interfacial engineering: Experiment and computational investigations

Performance evaluation of WS2 as buffer and Sb2S3 as hole transport layer in CZTS solar cell by numerical simulation

Ultrathin chromium oxide buffer layer by reactive thermal deposition for high-performance semitransparent perovskite solar cells

SCAPS 1D based study of hole and electron transfer layers to improve MoS2−ZrS2 solar cell efficiency

Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers

Design and simulation of a highly efficient CuBi2O4 thin-film solar cell with hole transport layer

Progress in Perovskite Solar Cells Based on Different Buffer Layer Materials

The Performance Improvement of Using Hole Transport Layer with Lithium and Cobalt for Inverted Planar Perovskite Solar Cell

Interface Connection Modulation by Cu X S Buffer Layer on Charge Transfer Performance Enhancement of CuInS 2 Quantum Dot-Sensitized Solar Cells

Novel Cathode Buffer Layer Enabling over 21.6%/20.9% Efficiency in wide bandgap/inorganic Perovskite Solar Cells

Interface passivation and band alignment of high efficiency Cu(In, Ga)Se2 solar cells: Application of Mo(OxSe1-x)2 buffer layer at Mo/ Cu(In, Ga)Se2 interface

Numerical Investigation of CuSbS2Thin Film Solar Cell using SCAPS-1D: Enhancement of Efficiency on Experimental Films by Defect Studies

Interface connection modulation by CuxS buffer layer on charge transfer performance enhancement of CuInS2 quantum dot-sensitized solar cells

Photoresponse Enhancement of Cu2O Solar Cell with Sulfur-Doped ZnO Buffer Layer to Mediate the Interfacial Band Alignment

Sb2o3 Anode Buffer Induced Morphology Improvement in Small Molecule Organic Solar Cells

Stable CdTe Thin Film Solar Cells with a MoOx Back‐contact Buffer Layer