High-performance solar-blind photodetectors based on Ta-doped ZnSnO 3 single crystal thin films
Hongyan Zhu,Biao Zhang,Rongrong Chen,Xinyu Han,Yuankang Wang,Hao Zhou,Caina Luan,Jin Ma,Hongdi Xiao
DOI: https://doi.org/10.1016/j.jallcom.2024.174854
IF: 6.2
2024-05-23
Journal of Alloys and Compounds
Abstract:High-quality Ta-doped ZnSnO 3 single crystal thin films were grown on LiTaO 3 substrates by pulsed laser deposition (PLD) method, and the effects of Ta doping on the lattice structure, surface morphology, electronic structure and photodetector performance of ZnSnO 3 thin films are studied in detail. When the Ta doping content is 1 %, the [0001]-oriented ZnSnO 3 thin film present the highest quality, which the optical band gap (3.75 eV), the smoothest surface roughness (0.83 nm), and the biggest carrier concentration (4.03 × 10 19 cm −3 ). For the solar-blind photodetectors (PDs), based on these excellent characteristics, the 1 % Ta-doped ZnSnO 3 PD exhibits large light-to-dark current ratio (>10 3 ), responsivity (21.37 A/W), detectivity ( (3.63±0.71) ×1011 Jones) and external quantum efficiency (∼1.04× 10 4 %) under 254 nm UV light at an applied bias of 5 V. This study suggests that Ta doping can effectively improve the optoelectronic performance of ZnSnO 3 PDs, laying the foundation for their application.
materials science, multidisciplinary,metallurgy & metallurgical engineering,chemistry, physical