Abstract:Transparent conductive oxide (TCO) films are crucial in optoelectronic devices, such as photodetectors, due to their unique blend of transparency and electrical conductivity. ZnO is a top choice for TCOs owing to its excellent properties, non-toxicity, and cost-effectiveness. In this work, we explore the potential of carbon doping to enhance the electrical properties of ZnO films for transparent conductive applications. Our findings reveal that C-doped ZnO (ZnO:C) films retain the pristine high quality and surface morphology despite an increase in defects with higher C doping. Notably, C doping does not compromise the visible light transmittance of ZnO films, while inducing a gradual increase in optical bandgap, indicative of the typical Burstein–Moss effect. As carbon doping increases, the ZnO:C films exhibit improved carrier concentration, lower resistivity, and sustained high mobility, achieving optimal performance with an electron concentration of 3.73 × 1019 cm−3, resistivity of 3.69 × 10−3 Ω cm, and mobility of 46.08 cm2 V−1 s−1. Finally, we utilized ZnO:C films as a transparent electrode material in ε-Ga2O3-based photodetector, achieving the development of transparent device and attaining high-performance solar-blind detection capabilities. This work provides a strategy for developing a transparent conductive oxide, with ZnO:C emerging as a promising rival to IIIA-doped ZnO for optoelectronic applications.

High-performance Solar-Blind Photodetectors Based on Ta-doped ZnSnO3 Single Crystal Thin Films

High-performance solar-blind photodetectors based on Ta-doped ZnSnO 3 single crystal thin films

Solar-blind ultraviolet photodetectors based on Ta-doped β-Ga2O3 heteroepitaxial films

Fabrication and characterization of ultraviolet detector based on epitaxial Ta-doped Zn2SnO4 films

Superior Performance of ZnGaO Solar-Blind Photodetectors by Implementing TFT Structure and Tunable ZNO Cycle Ratio

Growth and Characterization of Sn Doped Β-Ga2o3 Thin Films and Enhanced Performance in a Solar-Blind Photodetector

Improvement for the Performance of Solar-Blind Photodetector Based Onβ-Ga2o3thin Films by Doping Zn

High-Performance Solar-Blind UV Phototransistors Based on ZnO/Ga2O3 Heterojunction Channels.

Decrease of Oxygen Vacancy by Zn-doped for Improving Solar-Blind Photoelectric Performance in Β-Ga2o3 Thin Films

Fabrication of ZnSnO3 single crystal films on sapphire substrates by pulsed laser deposition for solar-blind photodetectors

Carbon-doped ZnO thin films: A transparent conductive oxide for application in solar-blind photodetectors

High-Performance Solar-Blind UV Phototransistors Based on ZnO/Ga 2 O 3 Heterojunction Channels

Effect of ZnTe Transition Layer to the Performance of CdZnTe/GaN Multilayer Films for Solar-Blind Photodetector Applications

High-performance Solar-Blind Ultraviolet Photodetector Based on Electrospun TiO2-ZnTiO3 Heterojunction Nanowires

Performance optimization of CZT thick films by CdTe buffer layers for solar-blind ultraviolet photoelectric detectors

Ta-Doped Ga2O3 Epitaxial Films on Porous P-Gan Substrates: Structure and Self-Powered Solar-Blind Photodetectors

High Performance UV Photodetectors Based on W Doped -Ta2o5 Single Crystalline Films

Ta-Doped Ga 2 O 3 Epitaxial Films on Porous p-GaN Substrates: Structure and Self-Powered Solar-Blind Photodetectors

High performance UV photodetectors based on W doped δ -Ta2O5 single crystalline films

Effect of Tantalum Doping on SnO2 Electron Transport Layer Via Low Temperature Process for Perovskite Solar Cells

Marked effects of Al-rich AlN transition layers on the performance of CdZnTe films for solar-blind photodetector