Investigation of Gallium Arsenide Deformation Anisotropy during Nanopolishing via Molecular Dynamics Simulation

Bo Zhao,Xifeng Gao,Jiansheng Pan,Huan Liu,Pengyue Zhao
DOI: https://doi.org/10.3390/mi15010110
IF: 3.4
2024-01-09
Micromachines
Abstract:Crystal orientation significantly influences deformation during nanopolishing due to crystal anisotropy. In this work, molecular dynamics (MD) simulations were employed to examine the process of surface generation and subsurface damage. We conducted analyses of surface morphology, mechanical response, and amorphization in various crystal orientations to elucidate the impact of crystal orientation on deformation and amorphization severity. Additionally, we investigated the concentration of residual stress and temperature. This work unveils the underlying deformation mechanism and enhances our comprehension of the anisotropic deformation in gallium arsenide during the nanogrinding process.
chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
What problem does this paper attempt to address?
This paper mainly discusses the issue of deformation anisotropy of Gallium Arsenide (GaAs) during nanoscale polishing. Molecular Dynamics Simulation was used to study the surface morphology, subsurface damage, amorphization degree, residual stress, and temperature distribution of GaAs with different crystal orientations. The authors analyzed the surface morphology, mechanical response, and phase transition process of GaAs with {100}, {110}, and {111} crystal orientations to reveal the influence of crystal orientation on deformation and amorphization degree. In addition, they also studied the changes in surface accumulation and temperature distribution after nanoscale polishing, which are significant for understanding the anisotropic deformation mechanism of GaAs in nanomachining processes and optimizing the processing technology.