Design and application of D‐band bandpass filter based on 0.18 μm complementary metal oxide semiconductor process

Ming‐An Chung,Chia‐Wei Lin,Chih‐Wei Yang,Ing‐Peng Meiy
DOI: https://doi.org/10.1002/mop.34313
IF: 1.311
2024-09-04
Microwave and Optical Technology Letters
Abstract:Abstract This paper designs a bandpass filter for D‐band and 0.18 μm complementary metal oxide semiconductor (CMOS) process. The bandpass filter is composed of an inverted L‐shaped coupling microstrip line and a cross‐coupled resonator, and is coupled to produce two controlled transmission zeros. A defected ground structure is used to make a good impedance match. The designed filter has a 3 dB impedance bandwidth of 52 GHz (149–201 GHz) with a center frequency of 175 GHz and an insertion loss of 3.23 dB. The design of this paper is a CMOS 0.18 μm process capable of applying the D‐band bandpass filter with the advantages of lower insertion loss, broadband, and compact size.
engineering, electrical & electronic,optics
What problem does this paper attempt to address?