Abstract:Magnetic topological insulators in the tetradymite family, such as Cr/V doped Bi2Se3, Bi2Te3, Sb2Te3, and their ternary compounds, provide a new route for realizing the novel time-reversal symmetry-breaking physics [1, 2]. To effectively manipulate these versatile quantum states, various heterostructures are demonstrated by utilizing the unique Néel order in an antiferromagnet CrSb and the topological order in a magnetic topological insulator Cr-doped (Bi,Sb)2Te3 [3-5] grown by molecular beam epitaxy. It is shown that emergent interfacial magnetic interactions can be tailored through deliberate artificial structural engineering. By investigating bilayers, trilayers, and superlattices made of these two components, interfacial exchange coupling and antiferromagnetic exchange coupling were shown to affect the topological magnetism as mediated by the massive Dirac fermions. The relationship of magnetic spin textures of the antiferromagnet to that of the magnetic topological insulator was further explored through polarized neutron reflectometry/diffraction, magneto-electrical transport measurements as well as the control of the mass of Dirac fermions by using different Cr doping concentrations. From these studies, the antiferromagnet is shown to be an efficient interfacial- and interlayer- exchange coupling layer for the massive Dirac fermions of the magnetic topological insulator, which additionally gives rise to a giant enhancement in magnetic ordering. This work provides a new framework for new topological antiferromagnetic spintronics. *The work was in part supported by the SHINES Center, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award # S000686, National Science Foundation, Army Research Office program under contract 15-1-10561, TANMS, FAME Center, and a Semiconductor Research Corporation program sponsored by MARCO and DARPA. References: [1] Y. L. Chen et al., Science 329, 659 (2010). [2] X.-L. Qi, T. L. Hughes, and S.-C. Zhang, Physical Review B 78, 195424 (2008). [3] X. Kou et al., Nature Communications 6, 8474 (2015). [4] X. Kou et al., Physical Review Letters 113, 137201 (2014). [5] Y. Fan et al., Nature Materials 13, 699 (2014).

ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics

ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics

Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials

Atomically constructing a van der Waals heterostructure of CrTe2/Bi2Te3 by molecular beam epitaxy

Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3

Wafer‐Scale Epitaxial Growth of the Thickness‐Controllable Van Der Waals Ferromagnet CrTe2 for Reliable Magnetic Memory Applications

Ultrathin Van Der Waals Antiferromagnet CrTe3 for Fabrication of In‐Plane CrTe3/CrTe2 Monolayer Magnetic Heterostructures

From ferromagnetic semiconductor to anti-ferromagnetic metal in epitaxial Cr$_x$Te$_y$ monolayers

Robust Two-Dimensional Ferromagnetism in Cr5Te8/CrTe2 Heterostructure with Curie Temperature above 400 K

Realization of monolayer ZrTe5 topological insulators with wide band gaps

(Invited) Towards Topological Antiferromagnetic Spintronics

Planar Heterojunction of Ultrathin CrTe 3 and CrTe 2 van der Waals Magnet

Epitaxial growth of quasi-2D van der Waals ferromagnets on crystalline substrates

Substantially Enhanced Spin Polarization in Epitaxial CrTe2 Quantum Films

Controlled Synthesis of 2D Ferromagnetic/Antiferromagnetic Cr7Te8/MnTe Vertical Heterostructures for High-Tunable Coercivity

Covalent 2D Cr2Te3 Ferromagnet

Self‐Intercalation Tunable Interlayer Exchange Coupling in a Synthetic van der Waals Antiferromagnet

Giant Topological Hall Effect in van der Waals Heterostructures of CrTe 2 /Bi 2 Te 3

Manipulation and Optical Detection of Artificial Topological Phenomena in 2D Van der Waals Fe5GeTe2/MnPS3 Heterostructures

Electronic and magnetic characterization of epitaxial CrBr$_3$ monolayers

Enhanced Ferromagnetism in Monolayer Cr2Te3 via Topological Insulator Coupling